等离子体增强原子层沉积技术制备碳化钴薄膜*

doi:10.13385/j.cnki.vacuum.2019.05.11

真空 ›› 2019, Vol. 56 ›› Issue (5): 56-60.doi: 10.13385/j.cnki.vacuum.2019.05.11

等离子体增强原子层沉积技术制备碳化钴薄膜^*

樊启鹏, 胡玉莲, 刘博文, 田旭, 江德荣, 刘忠伟

北京印刷学院印刷包装材料与技术北京市重点实验室等离子体物理与材料研究室; 北京 10260

收稿日期:2018-12-26 发布日期:2019-10-15
通讯作者: 刘忠伟,教授。
作者简介:樊启鹏（1994-）,江西省南昌市人,男,硕士生。
基金资助:
*国家自然科学基金（11775028）,绿色印刷与出版技术协同创新中心（15208）,北京市大学生科研计划（201803011）,北京印刷学院校级项目（Ea201801 and 12000400001, 04190118002/016）

Deposition of Cobalt Carbide Films by Plasma Enhanced Atomic Layer Deposition

FAN Qi-peng, HU Yu-lian, LIU Bo-wen, TIAN Xu, JIANG De-rong, LIU Zhong-wei

Beijing Key Laboratory of Printing & Packaging Materials and Technology, Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China

Received:2018-12-26 Published:2019-10-15

摘要/Abstract

摘要： 报道了一种新型PE-ALD工艺用于沉积碳化钴薄膜。以脒基钴为前驱体,在氢等离子体作用下,成功制备了碳化钴薄膜。薄膜厚度与沉积循环关系显示薄膜生长为理想的逐层生长行为,100℃下薄膜生长速率为0.066 nm/cycle。利用XRD和TEM对所沉积的薄膜进行表征,结果表明薄膜是多晶的六方晶系Co₃C晶体结构。XPS的结果表明沉积的碳化钴膜具有高纯度。在深宽比高达20:1的硅基底沟槽中研究碳化钴薄膜的保型性,显示该PE-ALD工艺可以沉积厚度均匀、光滑且高度保形的碳化钴薄膜,这有利于在高深宽比的3D结构中的涂覆并且在负载催化剂领域具有潜在应用。

关键词: 氢等离子体, 原子层沉积, 碳化钴薄膜, 低温

Abstract: In this article, we reported a new PE-ALD method for depositing cobalt carbide thin films. The cobalt carbide film was successfully prepared under the used of Co(amd)₂ as precursor and H₂ plasma as the reactant. The relationship between film thickness and deposition cycle showed an ideal layer-by-layer film growth behavior with a saturated film growth rate of 0.66 nm/cycle at 100℃. The as-deposited films were characterized by XRD and TEM, which illustrated the films were polycrystalline hexagonal Co₃C crystal structures. The XPS indicated a high purity deposited cobalt carbide film. This PE-ALD process could deposit a pure, smooth and highly conformal cobalt carbide thin film in trench with 201 aspect ratio, which can be beneficial to coating on complex high-aspect-ratio 3D structures with potential applications in microelectronics and catalytic fields.

Key words: hydrogen plasma, atomic layer deposition, cobalt carbide thin film, low temperature

中图分类号:

TB34

樊启鹏, 胡玉莲, 刘博文, 田旭, 江德荣, 刘忠伟. 等离子体增强原子层沉积技术制备碳化钴薄膜^*[J]. 真空, 2019, 56(5): 56-60.

FAN Qi-peng, HU Yu-lian, LIU Bo-wen, TIAN Xu, JIANG De-rong, LIU Zhong-wei. Deposition of Cobalt Carbide Films by Plasma Enhanced Atomic Layer Deposition[J]. VACUUM, 2019, 56(5): 56-60.

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等离子体增强原子层沉积技术制备碳化钴薄膜^*

Deposition of Cobalt Carbide Films by Plasma Enhanced Atomic Layer Deposition

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