溅射功率对铒薄膜微观结构的影响*

doi:10.13385/j.cnki.vacuum.2020.03.04

真空 ›› 2020, Vol. 57 ›› Issue (3): 17-20.doi: 10.13385/j.cnki.vacuum.2020.03.04

溅射功率对铒薄膜微观结构的影响^*

张庆芳^1,2, 易勇¹, 罗江山²

1.西南科技大学材料科学与工程学院,四川绵阳 621010;
2.中国工程物理研究院激光聚变研究中心,四川绵阳 621900

收稿日期:2019-12-19 发布日期:2020-06-18
通讯作者: 易勇，教授。
作者简介:张庆芳（1991-）,女,山西省忻州市人,硕士生。
基金资助:
等离子体物理重点实验室基金资助项目(6142A0404011017);西南科技大学研究生创新基金项目(19ycx0015)

Effect of Sputtering Power on Microstructure of Er Thin Films Deposited by Magnetron Sputtering

ZHANG Qing-fang^1,2, YI Yong¹, LUO Jiang-shan²

1. School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China;
2. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

Received:2019-12-19 Published:2020-06-18

摘要/Abstract

摘要： 采用直流磁控溅射方法制备出铒（Er）薄膜,利用X射线衍射仪（XRD）和扫描电子显微镜（SEM）研究了溅射功率对Er薄膜微观结构的影响。结果表明：在溅射功率20W~60W的范围内,Er薄膜均为hcp结构,且呈现明显的（110）晶面择优取向的微观织构。Er薄膜生长呈现柱状晶模式,随着溅射功率的增加,柱状晶组织相应长大,薄膜结构更加致密,表面更为平整,其平均晶粒尺寸7.7nm~9.6nm,表面粗糙度最低2.1nm。磁控溅射方法制备的Er薄膜与电子束蒸发等方法制备的Er薄膜相比具有不同的微观结构特征。

关键词: 磁控溅射, Er薄膜, 微观结构, 择优取向

Abstract: A series of erbium(Er) films were deposited by DC magnetron sputtering method. The effect of sputtering power on the microstructure of the Er thin films was investigated by X-ray diffraction and scanning electron microscope. The experimental results show that all the Er films deposited with the sputtering power of 20W~60W are mainly composed of hcp phase, and present(110) preferred orientation obviously. The Er films grow with typical columnar crystals that increase accordingly with the increasing of sputtering power. The Er films are dense and flat with the average grain size of 7.7nm~9.6nm and surface roughness of 2.1nm. The Er films deposited by magnetron sputtering exhibit different microstructural characteristics from other Er films grown by electron beam vapor.

Key words: magnetron sputtering, Er thin film, microstructure, preferred orientation

中图分类号:

TB742

张庆芳, 易勇, 罗江山. 溅射功率对铒薄膜微观结构的影响^*[J]. 真空, 2020, 57(3): 17-20.

ZHANG Qing-fang, YI Yong, LUO Jiang-shan. Effect of Sputtering Power on Microstructure of Er Thin Films Deposited by Magnetron Sputtering[J]. VACUUM, 2020, 57(3): 17-20.

参考文献

[1] Dow P A, Briers G W, Dewey M A P, et al. The structure of erbium deuteride targets for neutron generators[J]. Nuclear Instruments and Methods, 1968, 60(3); 293-296.
[2] Banerjee A, Abhilash S R, Umapathy G R, et al.Material engineering to fabricate rare earth erbium thin films for exploring nuclear energy sources[J]. Nuclear Instruments and Methods in Physics Research, A, 2018, 887: 34-39.
[3] Brumbach M T, Ohlhausen J A, Zavadil K R, et al.Activation of erbium films for hydrogen storage[J]. Journal of Applied Physics, 2011, 109: 114911.
[4] Ciria M, Arnaudas J I, Moral A D.Magnetoelastic properties of epitaxial holmium and erbium thin films[J]. Applied Physics Letters, 1998, 72(16); 2044-2046.
[5] Witt J D S, Cooper J F K, Satchell N, et al. Magnetic phases of sputter deposited thin-film erbium[J]. Scientific Reports, 2016, 6: 39021.
[6] Shen H H, Peng S M, Long X G, et al.Effect of thermal annealing on the microstructure and morphology of erbium films[J]. Thin Solid Films, 2012, 520: 6196-6200.
[7] Gu E D, Savaloni H, Player M A, et al.Characterization of evaporated erbium films at various stages of growth[J]. Journal of Physical and Chemistry of Solids, 1992, 53(1): 127-136.
[8] Savaloni H, Player M A.Influence of deposition conditions and of substrate on the structure of UHV deposited erbium films[J]. Vacuum, 1995, 46(2): 167-179.
[9] Shen H H, Peng S M, Long X G, et al.The effect of substrate temperature on the oxidation behavior of erbium thick films[J]. Vacuum, 2012, 86: 1097-1101.
[10] Shen H H, Peng S M, Long X G, et al.Influence of growth parameters on the microstructures of erbium films deposited on Si(111)substrates[J]. Vacuum, 2012, 86: 2075-2081.
[11] Parish C M, Snow C S, Kammler D R, et al.Processing effects on microstructure in Er and ErD₂ thin-films[J]. Journal of Nuclear Materials, 2010, 403: 191-197.
[12] Dakhel A A.Characterisation of oxidised erbium films deposited on Si(100)substrates[J]. Materials Chemistry and Physics, 2006, 100: 366-371.
[13] 谢华, 罗江山, 黎军, 等. 纳米晶Cu薄带的单辊法制备及结构分析[J]. 强激光与粒子束, 2006, 18(10): 1639-1642.
[14] Klug H P, Alexander L E.X-ray diffraction procedure for polycrystalline and amorphous materials[M]. New York; John Wiley and Son, 1974: 643-655.

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溅射功率对铒薄膜微观结构的影响^*

Effect of Sputtering Power on Microstructure of Er Thin Films Deposited by Magnetron Sputtering

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