Abstract: Numeric simulation of the three-layer hot-wall metal-organic chemical vapor deposition（MOCVD）vacuum reactor was performed, including the design and the final flow field distribution. In this article, on the basis of the optimization array of the nozzles, the substrates susceptor, the near ceiling wall around the susceptor and the wall above the susceptor were all heated and the partial hot-wall reactor was formed. Furthermore, the design of the vacuum reactor, the flowing speed of the top layer and the bottom layer were all investigated in detail. As a result, we can ensure that in the material growth region, the precursors and the carrier gases were all kept in a stable flow states without swirls and the precursors were concentrated on the position of the substrates, which increased the utilization of the reactive materials effectively and the reaction on the other wall was reduced largely. At last, materials was grown in this hot-wall MOCVD reactor and the thickness of the film was averaged. The FWHM of XRD rocking curves for the wafer is 149.8 arcsecond, indicating that good materials quality was gained.

Key words: MOCVD, reactor, hot-wall, nozzle, numerical simulation