VACUUM ›› 2023, Vol. 60 ›› Issue (6): 1-8.doi: 10.13385/j.cnki.vacuum.2023.06.01
• Measurement and Control • Next Articles
ZHU Tao-yuan, WEI Xian-long
CLC Number: TN304;TN303
| [1] RÜDENAUER F G, Field emission devices for space applications[J]. Surface and Interface Analysis, 2007, 39(2/3): 116-122. [2] MAKELA J M, WASHELESKI R L, KING L B.Regenerable field emission cathode for spacecraft neutralization[J]. Journal of Propulsion and Power, 2009, 25(4): 970-975. [3] MIER-HICKS F, LOZANO P C.Spacecraft-charging characteristics induced by the operation of electrospray thrusters[J]. Journal of Propulsion and Power, 2017, 33(2): 456-467. [4] SHIN Y M, ZHAO J, BARNETT L R, et al.Investigation of terahertz sheet beam traveling wave tube amplifier with nanocomposite cathode[J]. Physics of Plasmas, 2010, 17(12): 123105. [5] BUSTA H H, CHEN J M, SHEN Z, et al.Characterization of electron emitters for miniature X-ray sources[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003, 21(1): 344-349. [6] GÓRECKA-DRZAZGA A. Miniature X-ray sources[J]. Journal of Microelectromechanical Systems, 2017, 26(1): 295-302. [7] QI S K, WANG X X, LUO J R, et al.Secondary electron emission of the cathode in high-power continuous wave magnetron tubes[C]//2014 Tenth International Vacuum Electron Sources Conference(IVESC). St.Petersburg, Russia, 2014: 1-2. [8] WANG X, JIANG P, WANG B, et al.Recent progress of cathodes in high-power continuous wave magnetron tubes[C]//2018 IEEE International Vacuum Electronics Conference(IVEC). Monterey, CA, USA: IEEE, 2018: 45-46. [9] MURPHY E L, GOOD R H.Thermionic emission,field emission, and the transition region[J]. Physical Review, 1956, 102(6): 1464-1473. [10] SCHEER J J, VAN LAAR J.GaAs-Cs: a new type of photoemitter[J]. Solid State Communications, 1965, 3(8): 189-193. [11] GOLDSTEIN A M, GROVER N B.Semiconductor Surfaces[M]. Amsterdam: North-Holland, 1965. [12] MARTINELLI R U, FISHER D G.The application of semiconductors with negative electron affinity surfaces to electron emission devices[J]. Proceedings of the IEEE, 1974, 62(10): 1339-1360. [13] SPICER W E.Photoemissive, photoconductive, and optical absorption studies of alkali-antimony compounds[J]. Physical Review, 1958, 112(1): 114-122. [14] 常本康. 负电子亲和势光电阴极50年史话[J]. 红外技术, 2015, 37(10): 801-806. [15] TURNBULL A A, EVANS G B.Photoemission from GaAs-Cs-O[J]. Journal of Physics D: Applied Physics, 1968, 1(2): 155. [16] FISHER D G, ENSTROM R E, ESCHER J S, et al.Photoelectron surface escape probability of(Ga, In)As: Cs-O in the 0.9 to[inverted lazy s]1.6μm range[J]. Journal of Applied Physics, 1972, 43(9): 3815-3823. [17] GARBE S.CsF, Cs as a low work function layer on the GaAs photocathode[J]. Physica Status Solidi A, 1970, 2(3): 497-501. [18] WILLIAMS B F, SIMON R E.Direct measurement of hot electron-phonon interactions in GaP[J]. Physical Review Letters, 1967, 18(13): 485-487. [19] STUPP E, PELISSIER A, KIDDER M, et al.GaP negative-electron-affinity cold cathodes: a demonstration and appraisal[J]. Journal of Applied Physics, 1977, 48(11): 4741-4748. [20] SUKEGAWA T, KAN H, NAKAMURA T, et al.GaP negative-electron-affinity cold cathodes[J]. Journal of Applied Physics, 1979, 50(5): 3780-3782. [21] NORTON T J, WOODGATE B E, STOCK J, et al.Results from Cs activated GaN photocathode development for MCP detector systems at NASA GSFC[C]//Optical Science and Technology, SPIE′s 48th Annual Meeting. San Diego, California, USA, 2003: 155-164. [22] WANG X, WANG M, LIAO Y, et al.Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication,and performance characterization[J]. Journal of Materials Chemistry C, 2021, 9(38): 13013-13040. [23] YANG M, CHANG B, WANG M.Cesium, oxygen coadsorption on AlGaN(0001) surface:experimental research and ab initio calculations[J]. Journal of Materials Science: Materials in Electronics, 2015, 26(4): 2181-2188. [24] ZHANGYANG X, LIU L, LV Z, et al.Enhanced collection efficiency of photoelectrons of negative electron affinity AlGaN heterojunction nanorod array photocathodes[J]. JOM, 2022, 74(1): 53-62. [25] UEBBING J J, JAMES L W.Behavior of cesium oxide as a low work-function coating[J]. Journal of Applied Physics, 1970, 41(11): 4505-4516. [26] MILTON A F, BAER A D.Interfacial barrier of heterojunction photocathodes[J]. Journal of Applied Physics, 1971, 42(12): 5095-5101. [27] GAO H R.Investigation of the mechanism of the activation of GaAs negative electron affinity photocathodes[J]. Journal of Vacuum Science & Technology A, 1987, 5(4): 1295-1298. [28] LIN L W.The role of oxygen and fluorine in the electron emission of some kinds of cathodes[J]. Journal of Vacuum Science & Technology A, 1988, 6(3): 1053-1057. [29] LU Q B, PAN Y X, GAO H R.Optimum(Cs, O)/GaAs interface of negative-electron-affinity GaAs photocathodes[J]. Journal of Applied Physics, 1990, 68(2): 634-637. [30] SOMMER A H.Cesium-oxygen activation of three-five compound photoemitters[J]. Journal of Applied Physics, 1971, 42(5): 2158. [31] PHILLIPS C C, HUGHES A E, SIBBETT W.Quantitative XPS surface chemical analysis and direct measurement of the temporal response times of glass-bonded NEA GaAs transmission photocathodes[J]. Journal of Physics D: Applied Physics, 1984, 17(8): 1713-1725. [32] MARTINELLI R U.Infrared photoemission from silicon[J]. Applied Physics Letters, 1970, 16(7): 261-262. [33] MARTINELLI R U.Reflection and transmission secondary emission from silicon[J]. Applied Physics Letters, 1970, 17(8): 313-314. [34] MARTINELLI R U.Negative electron affinity surfaces on silicon using a rubidium/oxygen dipole layer[J]. Journal of Applied Physics, 1973, 44(6): 2566-2570. [35] LEVINE J D.Structural and electronic model of negative electron affinity on the Si/Cs/O surface[J]. Surface Science, 1973, 34(1): 90-107. [36] HIMPSEL F J, KNAPP J A, VANVECHTEN J A, et al.Quantum photoyield of diamond(111)-a stable negative- affinity emitter[J]. Physical Review B, 1979, 20(2): 624-627. [37] VAN DER WEIDE J, ZHANG Z, BAUMANN P K, et al. Negative-electron-affinity effects on the diamond(100)surface[J]. Physical Review B, 1994, 50(8): 5803-5806. [38] NEMANICH R J, BAUMANN P K, BENJAMIN M C, et al.Negative electron affinity surfaces of aluminum nitride and diamond[J]. Diamond and Related Materials, 1996, 5(6-8): 790-796. [39] BAUMANN P K, NEMANICH R J.Electron affinity and Schottky barrier height of metal-diamond(100), (111), and (110) interfaces[J]. Journal of Applied Physics, 1998, 83(4): 2072-2082. [40] CUI J B, RISTEIN J, LEY L.Electron affinity of the bare and hydrogen covered single crystal diamond(111)surface[J]. Physical Review Letters, 1998, 81(2): 429-432. [41] KRAINSKY I L, ASNIN V M.Negative electron affinity mechanism for diamond surfaces[J]. Applied Physics Letters, 1998, 72(20): 2574-2576. [42] MAIER F, RISTEIN J, LEY L.Electron affinity of plasma-hydrogenated and chemically oxidized diamond(100) surfaces[J]. Physical Review B, 2001, 64(16): 165411. [43] SPEAR K E.Diamond-ceramic coating of the future[J]. Journal of the American Ceramic Society, 1989, 72(2): 171-191. [44] PICKETT W E.Negative electron affinity and low work function surface: cesium on oxygenated diamond(100)[J]. Physical Review Letters, 1994, 73(12): 1664-1667. [45] FOX C A, KELLY M A, HAGSTROM S B, et al.Photoelectron emission from the cesiated diamond(110)surface[J]. MRS Online Proceedings Library, 1995, 416: 449-454. [46] GEIS M W, TWICHELL J C, MACAULAY J, et al.Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment[J]. Applied Physics Letters, 1995, 67(9): 1328-1330. [47] LOH K P, XIE X N, YANG S W, et al.A spectroscopic study of the negative electron affinity of cesium oxide-coated diamond(111) and theoretical calculation of the surface density-of-states on oxygenated diamond(111)[J]. Diamond and Related Materials, 2002, 11(7): 1379-1384. [48] BANDIS C, PATE B B.Photoelectric emission from negative-electron-affinity diamond(111) surfaces:exciton breakup versus conduction-band emission[J]. Physical Review B, 1995, 52(16): 12056-12071. [49] DIEDERICH L, KÜTTEL O M, AEBI P, et al. Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy[J]. Surface Science, 1998, 418(1): 219-239. [50] BANDIS C, PATE B B.Photoelectric emission from the negative electron affinity(100) diamond surface-exciton effects[J]. Surface Science, 1996, 350(1-3): 315-321. [51] HUMPHREYS T P, THOMAS R E, MALTA D P, et al.The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001)surfaces[J]. Applied Physics Letters, 1997, 70(10): 1257-1259. [52] DIEDERICH L, KÜTTEL O M, AEBI P, et al. Photoelectron emission from the negative electron affinity caesiated natural diamond(100) surface[J]. Diamond and Related Materials, 1998, 7(2-5): 660-665. [53] KOHN E S.Cold-cathode electron emission from silicon[J]. Applied Physics Letters, 1971, 18(7): 272-273. [54] TAKEUCHI D, MAKINO T, KATO H, et al.Electron emission from a diamond(111) p-i-n+ junction diode with negative electron affinity during room temperature operation[J]. Applied Physics Express, 2010, 3(4): 041301. |
| [1] | FANG You-wei, LIU Lin, YU Shi-ji, LI Yu-tao. Study on Electronic Emission of Mo, Hf Grid Material [J]. VACUUM, 2022, 59(6): 60-64. |
| [2] | LI Jian, TONG Hong-hui, DAN Min, JIN Fan-ya, WANG Kun, CHEN Lun-jiang. Applications and research progress of field emission electron sources [J]. VACUUM, 2019, 56(3): 27-31. |
|