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真空 ›› 2019, Vol. 56 ›› Issue (1): 45-48.doi: 10.13385/j.cnki.vacuum.2019.01.09

• • 上一篇    

射频溅射功率对室温沉积 AZO 薄膜性能的影响

仲召进 1,2,曹 欣 1,2,高 强 1,韩 娜 1,崔介东 1,石丽芬 1,姚婷婷 1,马立云 1,彭 寿 1   

  1. 1.中建材蚌埠玻璃工业设计研究院有限公司,浮法玻璃新技术国家重点实验室,安徽 蚌埠 233000; 2.大连交通大学,辽宁 大连 116028
  • 收稿日期:2018-03-06 出版日期:2019-01-25 发布日期:2019-02-25
  • 作者简介:仲召进(1984-),男,江苏省兴化市人,本科,工程师。
  • 基金资助:
    国家重点研发计划项目(2016YFB0303700),安徽省重点研究与开发计划项目(1704a0902010)

Effect of RF sputtering power on properties of AZO thin films deposited at room temperature

ZHONG Zhao-jin 1,2, CAO Xin 1,2, GAO Qiang1, HAN Na1, CUI Jie-dong1, SHI Li-fen1, YAO Ting-ting1, MA Li-yun1, PENG Shou1   

  1. 1.State Key Laboratory of Advanced Technology for Float Glass Technology,(CNBM)Bengbu Design & Research Institute for Glass Industry Co., Ltd, Bengbu 233000, China; 2.Dalian Jiaotong University, Dalian 116028, China
  • Received:2018-03-06 Online:2019-01-25 Published:2019-02-25

摘要: 本文采用直流射频耦合磁控溅射技术,在玻璃基底上室温沉积 AZO 薄膜,将射频电源功率从 0W 增加到到 200W。通过 X 射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外分光光度计、霍尔效应测试系统重点研究了 AZO 薄膜的晶体结构、表面形貌、光学性能和电学性能。研究结果表明,直流射频耦合磁控溅射可以在室温下制备性能优异的 AZO 薄膜,且射频溅射功率对 AZO 薄膜光电性能有显著的影响,随着射频功率的提高,AZO 薄膜致密性增加,粒子逐渐变大,薄膜表面形貌和生长形态发生一定变化。在射频功率为 200W 时,室温制备的 AZO 薄膜电阻率达到最低 5.39×10 -4 Ω·cm,薄膜平均可见光透过率达到 82.6%。

关键词: AZO 薄膜, 直流射频耦合, 表面形貌, 电学性能, 光学性能

Abstract: The Al -doped ZnO (AZO) thin films were deposited by DC -RF coupled magnetron sputtering system on glass substrates at room temperature. The RF sputtering power increased from 0 to 200W. The structure, surface morphology, optical and electrical properties of the AZO films were investigated by using X -ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and hall effect test system as a function of different RF sputtering power, respectively. The results indicate that AZO thin films with excellent performance can be prepared by DC-RF coupled magnetron sputtering at room temperature. Meanwhile, the RF sputtering power has a significant impact on the optical and electrical properties of the AZO thin films. With the increase of RF sputtering power, the compactness of AZO films and the grains size were increased, the surface morphology and growth form of the AZO films change greatly. Under RF sputtering power of 200W, the lowest resistivity of the AZO film is  5.39×10 -4 Ω·cm. The average optical transmittance of the AZO film prepared at room temperature is approximately 82.6% in the visible wavelength.

Key words: AZO film, DC-RF coupled, surface morphology, optical property, electrical property

中图分类号: 

  • TB34
[1] 姚婷婷, 仲召进, 李 刚, 汤永康, 杨 勇, 金克武, 沈洪雪, 王天齐, 彭塞奥, 金良茂, 沈鸿烈, 甘治平, 马立云 . 直流射频耦合制备微纳结构 AZO 薄膜及其性能研究[J]. 真空, 2018, 55(6): 64-67.
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