Abstract: Large-size silicon carbide (SiC) single crystal is the key to fabricate high-quality power devices and radio frequency devices. The main growth technique is physical vapor transport method, in which the chamber temperature field greatly affects the crystal growth rate and quality. In this paper, the influence of induction coil size and layout parameters is numerically studied to optimize the temperature field of induction furnace for the 12-inch SiC single crystal growth. The results show that reducing the coil position or decreasing the coil/crucible height ratio can reduce the radial temperature gradient of the seed crystal, and increase the axial temperature gradient of the growth chamber. It can thus improve the quality of single crystal and increase the growth rate. Compared to the coil position at 0 mm, positioning the coil at -200 mm reduces the radial temperature gradient of the seed crystal by approximately 13%, while increases the axial temperature gradient in the growth cavity by 8%. When the coil / crucible height ratio decreases from 2 to 0.75, the radial temperature gradient of the seed crystal decreases by about 5.4%, and the axial temperature gradient of the growth cavity increases by 2.1%. However, the turn-height to coil-distance proportion, diameter and turn width of the coil have little influence on the temperature field in the furnace.

Key words: 12-inch SiC single crystal, induction heating, coil, physical vapor transport method, temperature field