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VACUUM ›› 2026, Vol. 63 ›› Issue (1): 22-27.doi: 10.13385/j.cnki.vacuum.2026.01.04

• Thin Film • Previous Articles     Next Articles

Improvement of Panel-Level Packaging Substrates Using N2 Flow Assistance

LI Ting, CHEN Zhiqiang, FANG Anan, HU Xiaobo, YANG Hongsheng, ZHANG Xiaojun   

  1. Arrayed Materials Co., Ltd., Shenzhen 518110, China
  • Received:2024-11-01 Online:2026-01-25 Published:2026-02-02

Abstract: Fan-out panel-level packaging (FOPLP) technology demonstrates significant advantages in heterogeneous chip integration and cost reduction, yet the increase in substrate size exacerbates the thermal stress warpage. Aimed at the heating and cooling processes of large-size glass substrates in vacuum chambers, a series of validation experiments were designed to investigate the effects of different pressure conditions (10-3, 20, 100 and 105 Pa) and N2 gas flow assistance on the thermal behavior and temperature distribution of the substrates. The results show that under the same heating parameters and duration, the lower degas chamber pressure causes slower substrate heating rate and larger temperature difference between the center and the corner, while the opposite trend is observed during the cooling process. When the chamber pressure is approximately 100 Pa, the substrate surface provides the most stable heating condition. Introducing a low flow rate of N2 at 100 Pa can improve the heating and cooling efficiency, and maintain the the edge and the center temperature difference at 5-10 ℃.

Key words: FOPLP, glass substrate, degas, N2 flow assistance, thermal stress warpage

CLC Number:  TB79

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