探究直流磁控溅射下工艺参数对SiC薄膜性能的影响规律

doi:10.13385/j.cnki.vacuum.2022.04.10

真空 ›› 2022, Vol. 59 ›› Issue (4): 52-55.doi: 10.13385/j.cnki.vacuum.2022.04.10

探究直流磁控溅射下工艺参数对SiC薄膜性能的影响规律

张健, 李建浩, 齐振华

沈阳化工大学机械与动力工程学院,辽宁沈阳 110142

收稿日期:2021-09-30 出版日期:2022-07-25 发布日期:2022-08-09
作者简介:张健（1981-）,男,辽宁省沈阳市人,工学博士,副教授。

Effect of Process Parameters on SiC Film Properties under DC Magnetron Sputtering

ZHANG Jian, LI Jian-hao, QI Zhen-hua

School of Mechanical and Power Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China

Received:2021-09-30 Online:2022-07-25 Published:2022-08-09

摘要/Abstract

摘要： 针对脉冲激光法和升华法制备SiC薄膜时,沉积速率比较低、薄膜厚度不均匀等问题,本文采用真空直流磁控溅射技术,利用一种高含碳量的SiC靶材,在平面玻璃衬底表面沉积SiC薄膜,通过改变直流电源功率、溅射气压,研究了不同参数对薄膜沉积速率、薄膜厚度均匀性的影响。采用台阶仪、扫描电子显微镜（SEM）、能谱仪（EDS）分别对薄膜厚度、横截面形貌和Si、C含量进行检测表征,从而得到最佳工艺参数。实验结果表明：在相同的溅射气压条件下,当溅射功率为2000W、电压为420V时,薄膜沉积速率达到15.39nm·min^-1;相同的直流电源功率条件下,当溅射气压为0.8Pa时,沉积薄膜的厚度均匀性较好,变异系数在3%以内,同时薄膜沉积速率达到10.67nm·min^-1;采用直流磁控溅射技术所制备的薄膜内部致密无孔洞,Si、C总含量在99%以上。

关键词: SiC, 直流磁控溅射, 直流溅射功率, 溅射气压

Abstract: To address the problems of low deposition rate and uneven film thickness in the preparation of SiC films by pulsed laser method and sublimation method, this paper adopts the vacuum DC magnetron sputtering technique to deposit SiC films on the surface of flat glass substrate using a SiC target with high carbon content. The effects of different parameters on the deposition rate and film thickness uniformity were investigated by varying the DC power and sputtering pressure. The thickness, cross-sectional morphology and Si, C content of the films were characterized by step meter, scanning electron microscope（SEM）and energy spectrometer（EDS） respectively to obtain the optimal process parameters. The experimental results show that the film deposition rate reached 15.39nm·min^-1 when the sputtering power was 2000W under the same sputtering air pressure condition.The variation coefficient of thickness uniformity of the deposited films was within 3% while the film deposition rate reached 10.67nm·min^-1 when the sputtering air pressure was 0.8Pa under the same DC power condition. In addition, the films prepared by DC magnetron sputtering were dense and porosity-free inside,and the Si, C content was above 99%.

Key words: SiC, DC magnetron sputtering, DC sputtering power, sputtering pressure

中图分类号:

TB34

张健, 李建浩, 齐振华. 探究直流磁控溅射下工艺参数对SiC薄膜性能的影响规律[J]. 真空, 2022, 59(4): 52-55.

ZHANG Jian, LI Jian-hao, QI Zhen-hua. Effect of Process Parameters on SiC Film Properties under DC Magnetron Sputtering[J]. VACUUM, 2022, 59(4): 52-55.

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探究直流磁控溅射下工艺参数对SiC薄膜性能的影响规律

Effect of Process Parameters on SiC Film Properties under DC Magnetron Sputtering

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