真空 ›› 2020, Vol. 57 ›› Issue (6): 23-26.doi: 10.13385/j.cnki.vacuum.2020.06.05
戴永喜, 杨倩倩, 邓金祥, 孔乐, 刘红梅, 杨凯华, 王吉有
DAI Yong-xi, YANG Qian-qian, DENG Jin-xiang, KONG le, LIU Hong-mei, YANG Kai-hua, WANG Ji-you
摘要: 本文采用磁控溅射法制备Si元素掺杂的ZnSnO薄膜(SZTO),研究Si元素掺杂对薄膜样品性能的影响。XRD衍射图谱表明,不同Si掺杂含量的薄膜均呈现非晶态。利用原子力显微镜表征薄膜的表面形貌,随着Si含量的增加,薄膜样品的表面粗糙度呈现出单调递增的趋势,Si掺杂使薄膜样品的平整度降低。透射谱测试表明不同Si含量掺杂的SZTO薄膜在可见光波段均具有较高的透射率,利用Si元素掺杂可以提高在可见光范围的透射率,并有效增加ZnSnO(ZTO)薄膜的光学带隙。PL谱测试表明,随着Si掺杂浓度的升高,PL谱的强度呈现出不同程度的增大,且展宽变宽,这表明Si掺杂的ZTO薄膜样品中引入了一些深能级缺陷。
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