不同浓度的Mg掺杂β-Ga2O3薄膜的制备与研究*

doi:10.13385/j.cnki.vacuum.2021.03.06

真空 ›› 2021, Vol. 58 ›› Issue (3): 30-34.doi: 10.13385/j.cnki.vacuum.2021.03.06

不同浓度的Mg掺杂β-Ga₂O₃薄膜的制备与研究^*

杨子淑, 段苹, 邓金祥, 张晓霞, 张杰, 杨倩倩

北京工业大学理学部,北京 100124

收稿日期:2020-05-06 出版日期:2021-05-25 发布日期:2021-06-01
通讯作者: 段苹,副教授。
作者简介:杨子淑（1995-）,女,天津市人,硕士。
基金资助:
*北京市自然科学基金（No.4192016）资助

Preparation and Study of Mg-doped β-Ga₂O₃ Thin Films with Different Content

YANG Zi-shu, DUAN Ping, DENG Jin-xiang, ZHANG Xiao-xia, ZHANG Jie, YANG Qian-qian

Faculty of Science, Beijing University of Technology, Beijing 100124, China

Received:2020-05-06 Online:2021-05-25 Published:2021-06-01

摘要/Abstract

摘要： 本文采用射频磁控溅射方法在石英和高阻硅衬底上制备纯β-Ga₂O₃薄膜和不同掺杂浓度的Mg掺杂β-Ga₂O₃薄膜,研究了薄膜的结构、光学和电学性质。X射线衍射测试结果表明,在我们的掺杂浓度内,Mg掺杂β-Ga₂O₃薄膜没有出现其他晶相的衍射峰,随着Mg掺杂浓度变大,薄膜的（401）和（601）衍射峰强度变弱。使用X射线光电子能谱测试薄膜中各元素的结合能和化学态。紫外-可见透射光谱测试结果表明薄膜在测试波段平均透光率高达80%以上,薄膜的带隙宽度随着Mg掺杂浓度变大而变大。霍尔效应测试结果表明我们采用射频磁控溅射方法制备的Mg掺杂β-Ga₂O₃薄膜的导电类型为p型,载流子浓度由3.76×10¹⁰cm^-3增加到1.89×10¹³cm^-3,说明Mg掺杂β-Ga₂O₃薄膜是一种很有潜力的p型半导体材料。

关键词: 射频磁控溅射, Mg掺杂β-Ga₂O₃薄膜, 带隙宽度, p型掺杂

Abstract: In this paper, the pure β-Ga₂O₃ thin film and Mg-doped β-Ga₂O₃ thin films with different Mg content were deposited on the Si and quartz substrates by radio frequency magnetron sputtering. The structure, optical and electrical properties of thin films were studied. The X-ray diffraction measurement results show that, there was no diffraction peak corresponding to other crystal phases for Mg-doped β-Ga₂O₃ thin films within our Mg content. And the intensities of diffraction peaks(401)and(601)of thin films weaken with the increase of Mg content. The X-ray photoelectron spectroscopy was used to test the binding energy and chemical states of the elements of the film. The UV transmission measurement results show that the average transmittance of the thin films is more than 80% in the test range, and the band gap of the thin films increases with the increase of Mg content. The Hall measurement results show that the conductivity type of Mg-doped β-Ga₂O₃ thin film by radio frequency magnetron sputtering is p-type, and the carrier concentration increases from 3.76×10¹⁰cm^-3 to 1.89×10¹³cm^-3. The Hall measurement results indicate that Mg-doped β-Ga₂O₃ thin film is a potential p-type material.

Key words: radio frequency magnetron sputtering, Mg-doped β-Ga₂O₃ thin film, band gap, p-type doping

中图分类号:

O484.4

杨子淑, 段苹, 邓金祥, 张晓霞, 张杰, 杨倩倩. 不同浓度的Mg掺杂β-Ga₂O₃薄膜的制备与研究^*[J]. 真空, 2021, 58(3): 30-34.

YANG Zi-shu, DUAN Ping, DENG Jin-xiang, ZHANG Xiao-xia, ZHANG Jie, YANG Qian-qian. Preparation and Study of Mg-doped β-Ga₂O₃ Thin Films with Different Content[J]. VACUUM, 2021, 58(3): 30-34.

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不同浓度的Mg掺杂β-Ga₂O₃薄膜的制备与研究^*

Preparation and Study of Mg-doped β-Ga₂O₃ Thin Films with Different Content

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