不同Si含量掺杂的ZTO薄膜的制备与研究

doi:10.13385/j.cnki.vacuum.2020.06.05

Abstract

Abstract: In this paper, Si-doped ZnSnO film(SZTO)was prepared by magnetron sputtering. The effect of Si element doping on the properties of the film samples was studied. The XRD diffraction patterns show that the films with different Si doping content are amorphous. The surface morphology of the film was characterized by atomic force microscopy. With the increase of Si content, the surface roughness of the film sample shows a monotonous increasing trend, and Si doping reduces the flatness of the film sample. The transmission spectrum test shows that the SZTO films doped with different Si content have higher transmittance in the visible light range. Doping with Si can improve the transmittance in the visible range and effectively increase the optical band gap of the ZTO film. The PL spectrum test shows that the intensity of the PL spectrum show different degrees of increase with the increase of Si doping concentration, and the broadening becomes wider, which indicates that some deep level defects are introduced into the Si-doped ZTO film samples.

Key words: RF magnetron sputtering, Si doping, ZnSnO film, optical band gap

CLC Number:

O469

DAI Yong-xi, YANG Qian-qian, DENG Jin-xiang, KONG le, LIU Hong-mei, YANG Kai-hua, WANG Ji-you. Preparation and Study of ZTO Thin Film Doped with Different Si Content[J].VACUUM, 2020, 57(6): 23-26.

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Preparation and Study of ZTO Thin Film Doped with Different Si Content

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