Abstract: In this paper, the pure β-Ga₂O₃ thin film and Mg-doped β-Ga₂O₃ thin films with different Mg content were deposited on the Si and quartz substrates by radio frequency magnetron sputtering. The structure, optical and electrical properties of thin films were studied. The X-ray diffraction measurement results show that, there was no diffraction peak corresponding to other crystal phases for Mg-doped β-Ga₂O₃ thin films within our Mg content. And the intensities of diffraction peaks(401)and(601)of thin films weaken with the increase of Mg content. The X-ray photoelectron spectroscopy was used to test the binding energy and chemical states of the elements of the film. The UV transmission measurement results show that the average transmittance of the thin films is more than 80% in the test range, and the band gap of the thin films increases with the increase of Mg content. The Hall measurement results show that the conductivity type of Mg-doped β-Ga₂O₃ thin film by radio frequency magnetron sputtering is p-type, and the carrier concentration increases from 3.76×10¹⁰cm^-3 to 1.89×10¹³cm^-3. The Hall measurement results indicate that Mg-doped β-Ga₂O₃ thin film is a potential p-type material.

Key words: radio frequency magnetron sputtering, Mg-doped β-Ga₂O₃ thin film, band gap, p-type doping