VACUUM ›› 2020, Vol. 57 ›› Issue (4): 1-5.doi: 10.13385/j.cnki.vacuum.2020.04.01
• Thin Film • Next Articles
ZHOU Gang1, LV Kai1, LIU Yuan-peng2, YU Yun-peng1, XU Cong-kang1, WANG Jiang-yong1
CLC Number:
[1] Marcus R K, Broekaert J A C. Glow Discharge Plasmas in Analytical Spectroscopy[J]. Trends in Analytical Chemistry, 2003, 22(3):186-186. [2] 史玉涛, 李小佳, 王海舟. 镀锡钢板辉光放电发射光谱法定量深度分析研究[J]. 冶金分析, 2007, 27(2):1-7. [3] 刘洁. 辉光放电光谱技术及其应用[J]. 河北冶金, 2015(2):67-70. [4] 余兴. 辉光放电光谱分析技术的应用进展[J]. 冶金分析, 2016, 29(2):7-21. [5] Tortora L, Urbini M, Fabbri A, et al.Three-dimensional characterization of OTFT on modified hydrophobic flexible polymeric substrate by low energy Cs +, ion sputtering[J]. Applied Surface Science, 2018, 448:628-635. [6] 唐雷钧, 潘梦瑜. 集成电路TEM分析的制样技术[J]. 电子显微学报, 1995, (6):459-462. [7] 梁家伟,林晓琪,毕焰枫,等. 不同工作参数下Ni/Ag双层膜GDOES深度谱的比较[J]. 真空, 2018, 55(2): 5-9. [8] 张加民. 辉光放电光谱仪及其在表面分析中的应用[J]. 表面技术, 2003, 32(6):63-66. [9] 梁家伟, 韩逸山, 庄素娜, 等. 辉光放电发射光谱在材料成分-深度分析中的应用[J]. 真空, 2017, (5): 39-46. [10] Lian S Y, Kim K J, Kim T G, et al.Prediction and experimental determination of the layer thickness in SIMSdepth profiling of Ge/Si multilayers:Effect of preferential sputtering and atomic mixing[J]. Applied Surface Science, 2019, 481:1103-1108. [11] 袁效东, 马建平, 张先明, 等. 不同特性黏度PET切片的制备及加工特性研究[J]. 浙江理工大学学报(自然科学版), 2017, (2): 208-213. [12] 刘毅, 王江涌. 溅射深度剖析的定量分析及其应用[J]. 真空, 2012, 49(2):71-76. [13] 康红利, 简玮, 韩逸山, 等. 溅射深度剖析定量分析及其应用研究进展[J]. 汕头大学学报(自然科学版), 2016, 31(2):3-24. [14] 康红利, 劳珏斌, 刘毅, 等. SIMS溅射深度剖析的定量分析[J]. 真空, 2015, 52(2): 44-49. [15] Hofmann S.Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure[J]. Surface and Interface Analysis, 1994, 21(9):673-678. [16] Hofmann S.From depth resolution to depth resolution function:refinement of the concept for delta layers, single layers and multilayers[J]. Surface & Interface Analysis, 2015, 27(9):825-834. [17] Ziegler J F, Ziegler M D, Biersack J P.SRIM—the stopping and range of ions in matter[J]. Nuclear Inst & Methods in Physics Research B, 2008, 268(11):1818-1823. [18] NIST. NIST Electron EAL Database SRD 82, [EB/OL]. [2009]. http://dx. doi. org//10.18434/T4MK5P. [19] Liu Y, Yu W H, Wang J Y.A model for quantification of GDOES depth profiles[J]. Vacuum, 2015, 113:5-10. [20] Wang J Y, Hofmann S, Zalar A, et al.Quantitative evaluation of sputtering induced surface roughness in depth profiling of polycrystalline multilayers using Auger electron spectroscopy[J].Thin Solid Films,2003,444(1-2):120-124. |
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