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VACUUM ›› 2026, Vol. 63 ›› Issue (1): 1-8.doi: 10.13385/j.cnki.vacuum.2026.01.01

• Thin Film •     Next Articles

Development and Process Verification of Large-scale Microwave Plasma-enhanced Atomic Layer Deposition Equipment

ZHU YuQuan1, ZHANG ZhiXuan1, ZHANG Jing1, WU JinLong1, WANG WeiChang1, LIAN ShuiYang1   

  1. Xiamen Xinyifang Technology Co., Ltd., Xiamen 361000, China
  • Received:2025-08-25 Online:2026-01-25 Published:2026-02-02

Abstract: : Research and development of atomic layer deposition has attracted considerable attention owing to the evolution of semiconductor processes towards smaller nodes and higher precision. In this study, a large-area microwave plasma-enhanced atomic layer deposition system was successfully developed, consisting of several major modules: vacuum, microwave transmission, gas supply and control. The system has successfully achieved high-density plasma excitation and highly reactive radicals generation, as demonstrated by the results of microwave transmission simulation and optical emission spectroscopy. A shorter one-cycle time of 14 s and a higher intensity O* radical emission intensity of 15 769 a.u. were realized by tuning microwave powers (400-1 000 W) and oxygen flow rates (10-100 sccm). The as-deposited 8-inch Al2O3 films exhibited extremely low non-uniformity of 0.88%, a refractive index of 1.65 at 632.8 nm (with a near-zero extinction coefficient), a high dielectric constant of 9.3, and a large breakdown field of 23.6 MV/cm, respectively. The microwave plasma atomic layer deposition system possesses outstanding compatibility with large-size wafers and high-quality film deposition, serving as a powerful equipment for applications in advanced semiconductor processes and integrated circuit manufacturing.

Key words: microwave plasma, atomic layer deposition, wafer-scale processing, Al2O3 film

CLC Number:  TN305.8

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