VACUUM ›› 2019, Vol. 56 ›› Issue (3): 37-40.doi: 10.13385/j.cnki.vacuum.2019.03.08
Previous Articles Next Articles
LI Ru-yong, DUAN Ping, CUI Min, WANG Ji-you, YUAN An-juan, DENG Jin-xiang1
CLC Number:
| [1] Yu S, Li L, Zhang W, et al.Investigation of low resistance transparent F-doped SnO2/Cu bi-layer films for flexible electronics[J]. Vacuum, 2014, 102: 43-47. [2] Yu C C, Yang K S, Chang H, et al.Preparation and characterization of In2O3 films with (111) preferred orientation[J]. Vacuum, 2014, 102: 63-66. [3] Jiang Q, Lu J, Ye Z.Plasma-induced surface textures of ZnO: Al transparent conductive films[J]. Vacuum, 2015, 111: 42-47. [4] Víllora E G, Shimamura K, Yoshikawa Y, et al.Electrical conductivity and carrier concentration control in β-Ga2 O3 by Si doping[J]. Applied Physics Letters, 2008, 92(20): 202120. [5] Orita M, Ohta H, Hirano M, et al.Deep-ultraviolet transparent conductive β-Ga2O3 thin films[J]. Applied Physics Letters, 2000, 77(25): 4166-4168. [6] Cheng Y, Liang H, Liu Y, et al.Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3: Cu films[J]. Materials Science in Semiconductor Processing, 2013, 16(5): 1303-1307. [7] Ramana C V, Rubio E J, Barraza C D, et al.Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films[J]. Journal of Applied Physics, 2014, 115(4): 043508. [8] Nakagomi S, Kokubun Y.Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate[J]. Journal of Crystal Growth, 2012, 349(1): 12-18 [9] Goyal A, Yadav B S, Thakur O P, et al.Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique[J]. Journal of Alloys and Compounds, 2014, 583: 214-219. [10] Oshima T, Arai N, Suzuki N, et al.Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy[J]. Thin Solid Films, 2008, 516(17): 5768-5771. [11] Mi W, Luan C, Li Z, et al.Ultraviolet-green photolumine- scence of β-Ga2O3 films deposited on MgAl6O10 (100) substrate[J]. Optical Materials, 2013, 35(12): 2624-2628. [12] Gogova D, Wagner G, Schmidbauer M, et al.Structural properties of Si-doped β-Ga203 layers grown by MOVPE[J].Journalof Crystal Growth,2014,401: 665-669. [13] Xianjin Feng, ZhaoLi, Wei Mi, et al.Mg-doped β-Ga203 films with tunable optical bandgap prepared on MgO(110)substrates by metal-organic chemical vapor deposition[J].Materials Sciencein Semiconductor Processing, 2015,34: 52-57. [14] Feng X, Li Z, Mi W, et al.Effect of annealing on the properties of Ga2O3:Mg films prepared on α-Al2O3 (0001) by MOCVD[J]. Vacuum, 2016, 124:101-107. [15] 王新, 向嵘, 田景全,等. 热退火对氧化镓薄膜性质的影响[J]. 长春理工大学学报(自然科学版), 2008, 31(4):45-47. [16] Donmez I, Ozgit-Akgun C, Biyikli N. Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces,Films, 2013, 31(1): 01A110. [17] 李香萍. ZnO 薄膜的 MOCVD 制备及 ZnO/Si 发光器件研究[D]. 长春: 吉林大学, 2009. [18] 马征征, 董鑫, 庄仕伟,等. 退火对Ga2O3薄膜特性的影响[J]. 发光学报, 2017, 38(5):606-610. [19] Orita M, Hiramatsu H, Ohta H, et al.Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures[J]. Thin Solid Films, 2002, 411(1): 134-139. [20] Soleimanian V, Aghdaee S R.The influence of annealing temperature on the slip plane activity and optical properties of nanostructured ZnO films, Appl.Surf.Sci. 258(2011) 1495-1504. |
| [1] | ZHANG Fen-li, WANG Jie-feng, DENG Jing-lian, SUN Hui-fang. Application of self-cleaning anti-reflection coating in solar collector tube [J]. VACUUM, 2019, 56(3): 41-43. |
| [2] | XU Jun-qi, LI Hou-jun, LI Mian, WANG Jian, SU Jun-hong, GOLOSOV Dmitriy A.. Optical and laser damage characteristics of TiO2 films prepared by thermal evaporation deposition technique [J]. VACUUM, 2019, 56(1): 39-44. |
| [3] | WANG Xiao-ran, MA Yan-bin, DUAN Ping, LI Ru-yong, ZHUANG Bi-hui, CUI Min, YUAN An-juan, DENG Jin-xiang. Effect of Mg doping concentration on Ga2O3 thin films prepared by RF magnetron sputtering [J]. VACUUM, 2018, 55(6): 68-72. |
|