面向TGV的磁控溅射深孔镀铜局部电场分析及理论研究*

doi:10.13385/j.cnki.vacuum.2026.05.03

真空 ›› 2026, Vol. 63 ›› Issue (5): 21-27.doi: 10.13385/j.cnki.vacuum.2026.05.03

面向TGV的磁控溅射深孔镀铜局部电场分析及理论研究^*

肖德志¹, 梁家侨¹, 全景程¹, 吴世傲², 张展成², 曹金枝², 田修波^2,3,4

1.东莞理工学院,集成电路学院（国际微电子学院）,广东东莞 523808;
2.新铂科技（东莞）有限公司,广东东莞 523808;
3.松山湖材料实验室,广东东莞 523808;
4.哈尔滨工业大学,先进焊接与连接国家重点实验室,黑龙江哈尔滨 150001

收稿日期:2025-11-28 出版日期:2026-09-25 发布日期:2026-09-28
通讯作者: 田修波,教授,博导。
作者简介:肖德志（1989-）,男,山东,副研究员,博士。
基金资助:
*国家自然科学基金（12405292）

Analysis and Theoretical Study of Local Electric Field in Deep-Hole Copper Sputtering for TGV

XIAO Dezhi¹, LIANG Jiaqiao¹, QUAN Jingcheng¹, WU Shiao², ZHANG Zhancheng², CAO Jinzhi², TIAN Xiubo^2,3,4

1. School of Integrated Circuits (International School of Microelectronics), Dongguan University of Technology, Dongguan 523808, China;
2. Xinbo Tech. (Dongguan) Co., Ltd., Dongguan 523808, China;
3. Songshan lake material Lab., Dongguan 523808;
4. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China

Received:2025-11-28 Online:2026-09-25 Published:2026-09-28

摘要/Abstract

摘要： 随着摩尔定律逼近物理极限,先进封装成为芯片性能突破的关键。玻璃通孔（TGV）因低介电常数、低损耗及低成本优势展现巨大潜力。但TGV填铜面临高深宽比通孔种子层覆盖不均、金属与玻璃结合力不足等挑战。文章通过磁控溅射制备 TGV铜种子层对其局部电场展开研究,构建真空腔体电场模型并结合有限元分析,探究基板类型、靶面与基板间距、直流偏压及通孔预镀翻转对通孔内电场的影响,揭示金属离子迁移与成膜机理。研究结果表明：玻璃基板内形成有效电势差与垂直电场,使金属离子抵达孔底,但横向电场仅集中孔顶致侧壁覆盖不均。减小间距与增大偏压能增强电场,却难改善横向电场分布。通孔预镀、翻转后,底部金属种子层可诱导横向电场,实现离子横向沉积,且种子层生长的等电势效应保障成膜均匀性。本研究为金属离子化磁控溅射在TGV种子层制备提供理论与技术参考。

关键词: 玻璃通孔, 深孔镀铜, 局部电场分析, 有限元仿真, 种子层

Abstract: With Moore's law approaching physical limits, advanced packaging has become a key for breaking through chip performance bottlenecks. Through-glass vias (TGV) show significant potential owing to advantages like low dielectric constant, low loss, and low cost. However, TGV copper filling faces challenges such as uneven seed layer coverage in high-aspect-ratio vias and insufficient bonding strength between metal and glass substrates. This study focuses on the local electric field during the preparation of TGV copper seed layers by magnetron sputtering. A vacuum chamber electric field model was established, combined with finite element analysis, to investigate the effects of substrate type, target-substrate distance, DC bias voltage, and via pre-sputtering flipping on the electric field distribution inside vias, and thus to reveal the transport behaviors of metal ions and the film formation mechanism. The results showed that an effective potential difference and a vertical electric field are formed in the glass substrate, enabling metal ions to reach the via bottom, while the transverse electric field is only concentrated at the via top, leading to uneven sidewall coverage. Reducing the distance and increasing the bias voltage can enhance the electric field, but fail to improve the transverse electric field distribution. After pre-sputtering and flipping, the metal seed layer at the bottom can induce a transverse electric field to achieve lateral deposition of ions, and the equipotential effect during seed layer growth facilitates uniform film formation. This study provides theoretical and technical references for the application of metal ionization magnetron sputtering in TGV seed layer preparation.

Key words: TGV, deep-hole copper plating, local electric field analysis, finite element simulation, seed layer

中图分类号: O539

肖德志, 梁家侨, 全景程, 吴世傲, 张展成, 曹金枝, 田修波. 面向TGV的磁控溅射深孔镀铜局部电场分析及理论研究^*[J]. 真空, 2026, 63(5): 21-27.

XIAO Dezhi, LIANG Jiaqiao, QUAN Jingcheng, WU Shiao, ZHANG Zhancheng, CAO Jinzhi, TIAN Xiubo. Analysis and Theoretical Study of Local Electric Field in Deep-Hole Copper Sputtering for TGV[J]. VACUUM, 2026, 63(5): 21-27.

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面向TGV的磁控溅射深孔镀铜局部电场分析及理论研究^*

Analysis and Theoretical Study of Local Electric Field in Deep-Hole Copper Sputtering for TGV

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