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VACUUM ›› 2023, Vol. 60 ›› Issue (3): 24-41.doi: 10.13385/j.cnki.vacuum.2023.03.05

• Thin Film • Previous Articles     Next Articles

Comparison of the Analytical Expressions of Three Quantitative Sputtering Depth Profiling Models

ZHONG Feng-min1, WANG Sui-peng1, ZHENG Jin-quan1, YANG Hao1, Siegfried Hofmann1,2, XU Cong-kang1,3, WANG Jiang-yong1,3   

  1. 1. Department of Physics, Shantou University, Shantou 515063, China;
    2. Max Planck Institute for Intelligent Systems, Stuttgart D-70569, Germany;
    3. Center of Semiconductor Materials and Devices, Shantou University, Shantou 515063, China
  • Received:2022-11-06 Online:2023-05-25 Published:2023-05-30

Abstract: In this paper, the analytical expressions of three widely used quantitative depth profiling models, atomic mixing-roughness-information depth(MRI) model, up-and-down slope(UDS) model and roughness-cascade mixing-recoil implantation(RMR)model are systematically discussed. Firstly, the profile characteristics of the three models are analyzed according to definition, formula derivation and simulation analysis. Then, these models are compared in details with the partial depth resolution functions, the depth resolution function, the analytical expressions of analyzed thick film layer and the fitting of experimental data. Finally, the shortcomings of the UDS model are explained, and the incorrect description of the RMR model are corrected. The reliability and superiority of the MRI model are verified by the dynamic characteristics of measured/simulated depth profile.

Key words: quantitative depth profiling, MRI model, UDS model, RMR model, analytical expression, dynamic characteristic

CLC Number:  TB303

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