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VACUUM ›› 2023, Vol. 60 ›› Issue (1): 17-22.doi: 10.13385/j.cnki.vacuum.2023.01.03

• Thin Film • Previous Articles     Next Articles

Quantification of High-resolution TOF-SIMS and Pulsed-RF-GDOES Depth Profiles of Mo/Si Nano-multilayers

MA Ze-qin1, LI Hai-ming2, ZHUANG Miao-xia2, LI Ting-ting1, LI Zhen-zhou2, JIANG Jie1, LIAN Song-you1, WANG Jiang-yong1,3, XU Cong-kang1,3   

  1. 1. Department of Physics, Shantou University, Shantou 515063, China;
    2. Department of Mathmatics, Shantou University, Shantou 515063, China;
    3. Center of Semiconductor Materials and Devices, Shantou 515063, China
  • Received:2022-06-27 Online:2023-01-25 Published:2023-02-07

Abstract: Time of flight second ion mass spectrometry(TOF-SIMS) and pulsed radio frequency glow discharge optical emission spectrometry(Pulsed-RF-GDOES) are two important depth profiling techniques, the former one is widely used in the fields of semiconductor industry and material science, while the latter one is usually applied to the analysis of industrial coating and surface oxynitride. Mo/Si nano-multilayers have been widely used in nanolithography, soft X-ray/EUV microscopy, solar astronomy and other fields because of their excellent reflection characteristics. In this paper, Pulsed-RF-GDOES and TOF-SIMS depth profiling data of Mo(3.5nm)/Si(3.5nm) nano-multilayer are evaluated quantitatively by the convolution and deconvolution methods with the resolution function of the atomic mixing-roughness-information depth(MRI). The layer structure, interface roughness and depth resolution upon depth profiling are obtained. The results show that GDOES depth profiling yields larger sputtering induced roughness, and the depth resolution of SIMS is better than that of GDOES.

Key words: Pulsed-RF-GDOES, TOF-SIMS, MRI model, depth resolution, convolution, deconvolution

CLC Number: 

  • TB43
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