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VACUUM ›› 2019, Vol. 56 ›› Issue (5): 56-60.doi: 10.13385/j.cnki.vacuum.2019.05.11

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Deposition of Cobalt Carbide Films by Plasma Enhanced Atomic Layer Deposition

FAN Qi-peng, HU Yu-lian, LIU Bo-wen, TIAN Xu, JIANG De-rong, LIU Zhong-wei   

  1. Beijing Key Laboratory of Printing & Packaging Materials and Technology, Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • Received:2018-12-26 Published:2019-10-15

Abstract: In this article, we reported a new PE-ALD method for depositing cobalt carbide thin films. The cobalt carbide film was successfully prepared under the used of Co(amd)2 as precursor and H2 plasma as the reactant. The relationship between film thickness and deposition cycle showed an ideal layer-by-layer film growth behavior with a saturated film growth rate of 0.66 nm/cycle at 100℃. The as-deposited films were characterized by XRD and TEM, which illustrated the films were polycrystalline hexagonal Co3C crystal structures. The XPS indicated a high purity deposited cobalt carbide film. This PE-ALD process could deposit a pure, smooth and highly conformal cobalt carbide thin film in trench with 201 aspect ratio, which can be beneficial to coating on complex high-aspect-ratio 3D structures with potential applications in microelectronics and catalytic fields.

Key words: hydrogen plasma, atomic layer deposition, cobalt carbide thin film, low temperature

CLC Number: 

  • TB34
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