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VACUUM ›› 2019, Vol. 56 ›› Issue (5): 52-55.doi: 10.13385/j.cnki.vacuum.2019.05.10

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Preparation and Properties of High Dielectric Hafnium Oxide Thin Film

LIAO Rong, DENG Yong-jian, WANG Jia-ju, ZHAO Fei-lan, ZHENG Ruo-qian, LIU Hui-jun, KE Jia-chong   

  1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
  • Received:2019-04-23 Published:2019-10-15

Abstract: HfO2 thin films were prepared on Si and quartz wafers by magnetron sputtering. SEM, XRD, XPS, UV-visible spectrophotometer and HP4284A precision LCR tester were used to study the surface morphology, microstructure, composition, optical properties and electrical properties of HfO2 thin film. The main conclusions were as followsthe surface of HfO2 thin film prepared by magnetron sputtering method is flat and dense with uniform grain size. The grain size is mostly between 10nm~20 nm. The thin film has a polycrystalline structure and a monoclinic crystal structure. The atomic ratio of O and Hf approached 21, and the atomic ratio of O and Hf increased with increase of the ratio of argon to oxygen. The transmittance is above 85% in the wavelength range of 400nm-800 nm, and the refractive index is above 2.0. The thin film has a small leakage current and a dielectric constant of 16 or more. High dielectric HfO2 material is suitable to replace traditional SiO2 as gate dielectric material.

Key words: HfO2, thin film, magnetron sputtering, dielectric constant

CLC Number: 

  • TN304
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