磁控溅射反应法制备TiN纳米薄膜

doi:10.13385/j.cnki.vacuum.2019.04.09

真空 ›› 2019, Vol. 56 ›› Issue (4): 37-39.doi: 10.13385/j.cnki.vacuum.2019.04.09

磁控溅射反应法制备TiN纳米薄膜

王槐乾, 姜宏伟

牡丹江师范学院,黑龙江牡丹江 157000

收稿日期:2018-10-20 发布日期:2019-08-22
通讯作者: 姜宏伟,高级工程师。
作者简介:王槐乾（1997-）,男,河南省杞县人,本科。

TiN Nano-Thin Films Prepared by Magnetron Sputtering Reaction

WANG Huai-qian, JIANG Hong-wei

Mudanjiang Normal College, Mudanjiang 157000, China

Received:2018-10-20 Published:2019-08-22

摘要/Abstract

摘要： 为研究N₂压强以及流量在磁控溅射中对TiN薄膜生长的影响,通过改变N₂气压以及流量使用射频磁控溅射设备在基片温度为300℃,时长2h下生长TiN薄膜。采用电子扫描显微镜（SEM）表征薄膜形貌,获得不同的TiN薄膜微观图像。通过改变工艺参数,可以制备具有不同微观形貌的TiN薄膜。

关键词: TiN, 磁控溅射, N₂ 流量, N₂气压

Abstract: To study the effect of N₂ pressure and flow on the growth of TiN films in magnetron sputtering, TiN films were grown at a substrate temperature of 300℃ for 2 hours using radio frequency magnetron sputtering equipment to change the air pressure and flow of N₂. The morphology of TiN films was characterized by electron scanning microscopy. TiN films with different micro morphology can be prepared by changing technological parameters.

Key words: TiN, magnetron sputtering, N₂ flow rate, N₂ pressure rate

中图分类号:

TB742

王槐乾, 姜宏伟. 磁控溅射反应法制备TiN纳米薄膜[J]. 真空, 2019, 56(4): 37-39.

WANG Huai-qian, JIANG Hong-wei. TiN Nano-Thin Films Prepared by Magnetron Sputtering Reaction[J]. VACUUM, 2019, 56(4): 37-39.

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磁控溅射反应法制备TiN纳米薄膜

TiN Nano-Thin Films Prepared by Magnetron Sputtering Reaction

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