大尺寸微波等离子体增强原子层沉积设备研制与工艺验证

doi:10.13385/j.cnki.vacuum.2026.01.01

摘要/Abstract

摘要： 随着半导体工艺不断向更小尺寸与更高精度方向发展,原子层沉积设备的研发日益受到广泛关注。本研究将微波等离子体源与原子层沉积技术相结合,通过系统性设计思路,集成真空系统、微波传导系统、气源输入系统与控制系统,成功研制出一套大尺寸微波等离子体增强原子层沉积设备。微波传输仿真与光学发射谱检测结果表明,该设备成功实现了高密度等离子体的稳定激发与高活性自由基的产生。通过不同微波功率（400~1 000 W）与不同氧气流量（10~1 000 sccm）的参数调控,设备实现了较短的单次沉积循环时间14 s,较高的氧自由基强度值15 769,所沉积的8英寸氧化铝薄膜的非均匀性为0.88%、632.8 nm处的折射率为1.65（消光系数接近于0）、介电常数与击穿场强分别高达9.3与23.6 MV/cm。本研究开发的微波等离子体增强原子层沉积设备,展现出良好的大尺寸晶圆适配与高质量薄膜沉积能力,为先进半导体工艺与集成电路制造中的高性能介电层、阻挡层及封装界面层等应用提供了有力的设备支撑。

关键词: 微波等离子体, 原子层沉积设备, 晶圆级工艺, 氧化铝薄膜

Abstract: ： Research and development of atomic layer deposition has attracted considerable attention owing to the evolution of semiconductor processes towards smaller nodes and higher precision. In this study, a large-area microwave plasma-enhanced atomic layer deposition system was successfully developed, consisting of several major modules: vacuum, microwave transmission, gas supply and control. The system has successfully achieved high-density plasma excitation and highly reactive radicals generation, as demonstrated by the results of microwave transmission simulation and optical emission spectroscopy. A shorter one-cycle time of 14 s and a higher intensity O* radical emission intensity of 15 769 a.u. were realized by tuning microwave powers (400-1 000 W) and oxygen flow rates (10-100 sccm). The as-deposited 8-inch Al₂O₃ films exhibited extremely low non-uniformity of 0.88%, a refractive index of 1.65 at 632.8 nm (with a near-zero extinction coefficient), a high dielectric constant of 9.3, and a large breakdown field of 23.6 MV/cm, respectively. The microwave plasma atomic layer deposition system possesses outstanding compatibility with large-size wafers and high-quality film deposition, serving as a powerful equipment for applications in advanced semiconductor processes and integrated circuit manufacturing.

Key words: microwave plasma, atomic layer deposition, wafer-scale processing, Al₂O₃ film

中图分类号: TN305.8

朱玉泉, 张志轩, 张婧, 吴金龙, 王伟昌, 连水养. 大尺寸微波等离子体增强原子层沉积设备研制与工艺验证[J]. 真空, 2026, 63(1): 1-8.

ZHU YuQuan, ZHANG ZhiXuan, ZHANG Jing, WU JinLong, WANG WeiChang, LIAN ShuiYang. Development and Process Verification of Large-scale Microwave Plasma-enhanced Atomic Layer Deposition Equipment[J]. VACUUM, 2026, 63(1): 1-8.

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