欢迎访问沈阳真空杂志社 Email Alert    RSS服务

VACUUM ›› 2021, Vol. 58 ›› Issue (1): 72-77.doi: 10.13385/j.cnki.vacuum.2021.01.15

• Thin Film • Previous Articles     Next Articles

Review on Semi-Conductive ZnO Thin Film Prepared by HiPIMS

ZHANG Yu-chen, ZHANG Hai-bao, CHEN Qiang   

  1. Lab of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
  • Received:2019-12-02 Online:2021-01-25 Published:2021-01-26

Abstract: Zinc oxide film material is considered to be the most potential transparent conductive film due to its high electrical conductivity, good optical transmittance, abundant raw material storage, and low cost. In particular, its wide band gap(3.37eV)and exciton binding energy up to 60 meV make it possible to prepare homojunction light-emitting devices and solar cell electron transport layers at ambient temperatures with great application prospects. However, it is difficult to achieve comprehensive control of the film quality by the traditional preparation method, and there are problems such as poor stability of p-ZnO, poor repeatability of the as-prepared film, and low efficiency of assembled devices. High-power pulsed magnetron sputtering(HiPIMS)technology has the characteristics of high ionization rate of the sputtering material, which is very suitable for the preparation of complex conductive films such as transparent conductive films and hard films. When HiPIMS is used to deposit oxides, carbides and nitrides, its high ionization rate can be used to obtain higher target ions and doped ions, which can form defects such as element substitution and interstitial atoms, and can be used to prepare stable p-type semiconductor material. In this paper, the research progress of zinc oxide thin films prepared by HiPIMS in recent years is reviewed. In view of the preparation problems of p-ZnO, the discharge characteristics and plasma parameters of ZnO thin films prepared by HiPIMS, undoped ZnO preparation, doped ZnO preparation, and plasma assist ZnO preparation and other aspects are summarized. Finally, the development direction of high-performance, high-quality, high-stability p-ZnO thin film preparation is prospected.

Key words: HiPIMS, ZnO thin film, discharge characteristics, doping and p-type

CLC Number: 

  • TB741
[1] Mang A, Reimann K, St. Rübenacke.Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressure[J]. Solid State Communications, 1995, 94(4): 251-254.
[2] Reynolds D C, Look D C, Jogai B.Optically pumped ultraviolet lasing from ZnO[J]. Solid State Communications, 1996, 99(12): 873-875.
[3] Khomyak V V, Ilashchuk M I, Parfenyuk O A, et al.Fabrication and electrical characterization of the anisotype n-ZnO/p-CdTe heterostructures for solar cell applications[J]. Journal of Applied Physics, 2013, 114(22): 223715.
[4] Jee S W, Park S J, Kim J, et al. Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars[J]. Applied Physics Letters, 2011, 99(5): 053118-053118-3.
[5] Fujimura N, Kondo K, Takada Y, et al.Al: ZnO top electrodes deposited with various oxygen pressures for ferroelectric(Pb, La)(Zr, Ti)O3 capacitors[J]. Electronics Letters, 2016, 52(3): 230-232.
[6] Tsai M T, Chang H C, Tsai P J. Synthesis and Characterization of AZO Thin Films by Sol-Gel Process: The Influences of Precursors and Dopants[J]. Key Engineering Materials, 2008, 368-372: 326-328.
[7] Shimizu M T, Shiosaki, and A. Kawabata, Growth of c-axis oriented ZnO thin films with high deposition rate on silicon by CVD method[J]. Journal of Crystal Growth, 1982, 57(1): 94-100.
[8] Haga K, Kamidaira M, Kashiwaba Y, et al. ZnO thin films prepared by remote plasma-enhanced CVD method[J]. Journal of Crystal Growth, 2000, 214-215(00): 77-80.
[9] Park S H, Chang J H, Minegishi T, et al.Investigation on the ZnO: N films grown on(0001)and(0001-)ZnO templates by plasma-assisted molecular beam epitaxy[J]. Journal of Crystal Growth, 2009, 311(7): 2167-2171.
[10] Kelly P J, Arnell R D.Magnetron sputtering: a review of recent developments and applications[J]. Vacuum, 2000, 56(3): 159-172.
[11] Naouar M, Ka I, Gaidi M, et al.Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition[J]. Materials Research Bulletin, 2014, 57: 47-51.
[12] 叶志镇. 磁控溅射的金属光学薄膜特性研究[J]. 真空科学与技术学报, 1989(5): 335-339.
[13] Subramanyam T K, Naidu B S, Uthanna S.Effect of substrate temperature on the physical properties of DC reactive magnetron sputtered ZnO films[J]. Optical Materials, 1999, 13(2): 239-247.
[14] Singh S, Srinivasa R S, Major S S.Effect of substrate temperature on the structure and optical properties of ZnO thin films deposited by reactive rf magnetron sputtering[J]. Thin Solid Films, 2007, 515(24): 8718-8722.
[15] Bohlmark J, Alami J, Christou C, et al.Ionization of sputtered metals in high power pulsed magnetron sputtering[J]. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, 2005, 23(1): 18-22.
[16] Loch D A L, Ehiasarian A P. A novel sputtering technique: Inductively Coupled Impulse Sputtering(ICIS)[J]. IOP Conference Series: Materials Science and Engineering, 2012, 39: 012006.
[17] 张志坤. 石墨衬底半导体ZnO和SiC材料生长研究[D]. 大连: 大连理工大学, 2014.
[18] 赵笑昆, 李博研, 张增光. 磁控溅射沉积制备Al掺杂ZnO薄膜的棒状晶粒生长[J]. 材料导报, 2019(S1): 112-115.
[19] 叶志镇. 氧化锌半导体材料掺杂技术与应用[M]. 杭州: 浙江大学出版社, 2009.
[20] 李春伟, 田修波, 巩春志, 等. 不同氩气气压下钒靶HIPIMS放电特性的演变[J]. 表面技术, 45(8): 103-109.
[21] Li Q, Yang L, Wang Z, et al.The superior properties of CrN coatings preparedby high power pulsed reactive magnetron sputtering[J]. AIP Advances, 2020. 10(1): 015125.
[22] 张海涛. 离子源辅助高功率脉冲磁控溅射制备N掺杂p型ZnO薄膜[D]. 北京: 北京印刷学院, 2015.
[23] Wang Z, Li Q, Yuan Y, et al.The semi-conductor of ZnO deposited in reactive HiPIMS[J]. Applied Surface Science, 2019, 494: 384-390.
[24] Bohlmark J, Gudmundsson J T, Alami J, et al.Spatial electron density distribution in a high-power pulsed magnetron discharge[J]. IEEE Transactions on Plasma Science, 2005, 33(2): 346-347.
[25] Gudmundsson J T.The high power impulse magnetron sputtering(HiPIMS)discharge[C]. 第三届微电子及等离子体技术国际会议.
[26] Youssef S, Combette P, Podlecki J, et al.Structural and Optical Characterization of ZnO Thin Films Deposited by Reactive rf Magnetron Sputtering[J]. Crystal Growth & Design, 2009, 9(2): 1088-1094.
[27] 袁燕. 关于高功率脉冲磁控溅射制备ZnO薄膜的研究[D]. 北京: 北京印刷学院, 2017.
[28] Tay C B, Tang J, Nguyen X S, et al.Low temperature aqueous solution route to reliable p-type doping in ZnO with K: growth chemistry, doping mechanism, and thermal stability[J]. The Journal of Physical Chemistry C, 2012, 116(45): 24239-24247.
[29] Lee J S, Cha S N, Kim J M, et al.p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires[J]. Advanced Materials, 2011, 23(36): 4183-4187.
[30] Balakrishnan L, Gowrishankar S, Premchander P, et al.Dual codoping for the fabrication of low resistive p-ZnO[J]. Journal of Alloys and Compounds, 2012, 512(1): 0-240.
[31] Li W, Kong C, Ruan H, et al.Investigation on the formation mechanism of In-N codoped p-type ZnCdO thin films: experiment and theory[J]. Journal of Physical Chemistry C, 2014, 118(39): 22799-22806.
[32] Senthil Kumar E, Chatterjee J, Rama N, et al.A codoping route to realize low resistive and stable p-type conduction in(Li, Ni): ZnO thin films grown by pulsed laser deposition[J]. ACS Applied Materials & Interfaces, 2011, 3(6): 1974-1979.
[33] 张海涛, 张海宝, 王正铎, 等. N掺p型氧化锌理论的研究进展[J]. 真空, 2016, 53(3): 12-15.
No related articles found!
Viewed
Full text


Abstract

Cited

  Shared   
  Discussed   
[1] WANG Jie, KANG Song, DONG Chang-kun. Study on Working Performance for Low Pressure Carbon Nanotube Micro Sensor[J]. VACUUM, 2021, 58(1): 1 -5 .
[2] LI Fu-song, WANG Wen-jun, LIN Wei-jian, PAN Ya-juan. Design of Intelligent Screw Air Compressor Performance Testing System[J]. VACUUM, 2021, 58(1): 19 -22 .
[3] YANG Nai-heng. Analysis and Discussion on the Vacuum Pump for Vacuum Degassing[J]. VACUUM, 2021, 58(1): 29 -32 .
[4] WANG Xun. Vacuum Measurement and Application for Aerospace[J]. VACUUM, 2021, 58(1): 15 -18 .
[5] ZHANG Shi-wei, SUN Kun, HAN Feng. Discussion on Several Common Problems in Screw Vacuum Pump Design[J]. VACUUM, 2021, 58(1): 23 -28 .
[6] . [J]. VACUUM, 2020, 57(6): 84 -86 .
[7] CHAI Hao, JIA Jun-wei, WANG Bin, LI Peng, CUI Shuang, FENG Xu, LI Wei, LIU Zhan, LI Shao-fei, CHEN Quan. Design and Characteristic Study on Compact Microwave ECR Plasma Source[J]. VACUUM, 2021, 58(1): 6 -9 .
[8] ZHANG Xiao, LIU Zhao-xian, MENG Dong-hui, REN Guo-hua, WANG Li-na, YAN Rong-xin. Simulation Study on Porous Graphene Helium Permeation[J]. VACUUM, 2021, 58(1): 10 -14 .
[9] CAI Xiao, CAO Zeng, ZHANG Wei, LI Rui-jun, HUANG Yong. Development of Pre-pumping System for Vacuum Chamber of HL-2M[J]. VACUUM, 2021, 58(1): 33 -37 .
[10] ZHU Zhi-peng, QIN Bin-wei, ZHANG Ying-li, YUE Xiang-ji, BA De-chun. Experimental Study on Particle Image Velocimetry of Rarefied Gas Flow[J]. VACUUM, 2021, 58(1): 38 -44 .