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Review on Semi-Conductive ZnO Thin Film Prepared by HiPIMS
ZHANG Yu-chen, ZHANG Hai-bao, CHEN Qiang
VACUUM. 2021, 58 (1):
72-77.
DOI: 10.13385/j.cnki.vacuum.2021.01.15
Zinc oxide film material is considered to be the most potential transparent conductive film due to its high electrical conductivity, good optical transmittance, abundant raw material storage, and low cost. In particular, its wide band gap(3.37eV)and exciton binding energy up to 60 meV make it possible to prepare homojunction light-emitting devices and solar cell electron transport layers at ambient temperatures with great application prospects. However, it is difficult to achieve comprehensive control of the film quality by the traditional preparation method, and there are problems such as poor stability of p-ZnO, poor repeatability of the as-prepared film, and low efficiency of assembled devices. High-power pulsed magnetron sputtering(HiPIMS)technology has the characteristics of high ionization rate of the sputtering material, which is very suitable for the preparation of complex conductive films such as transparent conductive films and hard films. When HiPIMS is used to deposit oxides, carbides and nitrides, its high ionization rate can be used to obtain higher target ions and doped ions, which can form defects such as element substitution and interstitial atoms, and can be used to prepare stable p-type semiconductor material. In this paper, the research progress of zinc oxide thin films prepared by HiPIMS in recent years is reviewed. In view of the preparation problems of p-ZnO, the discharge characteristics and plasma parameters of ZnO thin films prepared by HiPIMS, undoped ZnO preparation, doped ZnO preparation, and plasma assist ZnO preparation and other aspects are summarized. Finally, the development direction of high-performance, high-quality, high-stability p-ZnO thin film preparation is prospected.
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