Abstract: To address the problems of low deposition rate and uneven film thickness in the preparation of SiC films by pulsed laser method and sublimation method, this paper adopts the vacuum DC magnetron sputtering technique to deposit SiC films on the surface of flat glass substrate using a SiC target with high carbon content. The effects of different parameters on the deposition rate and film thickness uniformity were investigated by varying the DC power and sputtering pressure. The thickness, cross-sectional morphology and Si, C content of the films were characterized by step meter, scanning electron microscope（SEM）and energy spectrometer（EDS） respectively to obtain the optimal process parameters. The experimental results show that the film deposition rate reached 15.39nm·min^-1 when the sputtering power was 2000W under the same sputtering air pressure condition.The variation coefficient of thickness uniformity of the deposited films was within 3% while the film deposition rate reached 10.67nm·min^-1 when the sputtering air pressure was 0.8Pa under the same DC power condition. In addition, the films prepared by DC magnetron sputtering were dense and porosity-free inside,and the Si, C content was above 99%.

Key words: SiC, DC magnetron sputtering, DC sputtering power, sputtering pressure