氧气压强对脉冲激光沉积法制备的CuO薄膜性能的影响*

doi:10.13385/j.cnki.vacuum.2023.03.06

Abstract

Abstract: The effect of oxygen pressure on the structure and photoelectric properties of CuO thin films deposited by pulsed laser deposition(PLD) on glass substrates was studied. The test results show that the film deposited at 3×10^-3Pa, 3-5Pa, and 8-12Pa show single Cu₂O phase, mixed Cu₂O/CuO phase and single CuO phase, respectively. The orientation of CuO films changes from(111) to(002) when the oxygen pressure increases from 5Pa to 8Pa. The hall test results show that CuO film deposited at 3-5Pa is p-type, while the CuO film deposited at 8-12Pa is n-type, and the resistivity is the lowest and the carrier concentration is the highest when the oxygen pressure is 5Pa.

Key words: CuO film, semiconductor, pulsed laser deposition(PLD), electrical property, optical property

CLC Number: O484

XIANG Yu-chun, ZHU Jian-lei, YUAN Ya. Effect of Oxygen Pressure on the Properties of CuO Films Grown by Pulse Laser Deposition[J].VACUUM, 2023, 60(3): 42-45.

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Effect of Oxygen Pressure on the Properties of CuO Films Grown by Pulse Laser Deposition

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