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VACUUM ›› 2025, Vol. 62 ›› Issue (2): 62-67.doi: 10.13385/j.cnki.vacuum.2025.02.10

• Thin Film • Previous Articles     Next Articles

Study on the Effect of Radio Frequency Power on the Structure and Properties of ITO Films

SUN Bingcheng, ZHANG Xianwang, ZHANG Jian   

  1. School of Mechanical and Power Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China
  • Received:2024-03-15 Online:2025-03-25 Published:2025-03-24

Abstract: Indium tin oxide (ITO) transparent conductive oxide films were prepared on high temperature resistant quartz glass substrates by radio frequency (RF) magnetron sputtering technology, aiming to optimize their photoelectric properties. By systematically regulating the sputtering power variable, the influence mechanism of this parameter on the quality and photoelectric properties of ITO films was deeply analyzed. Then, the films were annealed to explore the change of film properties before and after annealing. The results show that with the increase of sputtering power, the average transmittance of visible light of ITO film shows a decreasing trend, while the sheet resistance of the film shows a trend of decreasing first, then increasing and then decreasing. When the sputtering power is set to 120 W and annealed at 300 ℃, the prepared film has the best comprehensive performance : the average transmittance of visible light reaches 90.59%, the square resistance is as low as 29.4Ω/□, and the quality factor reaches 1.26×10-2 Ω-1.

Key words: RF magnetron sputtering, annealing process, indium tin oxide, photoelectric property, sputtering power

CLC Number:  TB34

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