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VACUUM ›› 2026, Vol. 63 ›› Issue (4): 14-21.doi: 10.13385/j.cnki.vacuum.2026.04.03

• Thin Film • Previous Articles     Next Articles

Evolution of Ga2O3 Thin Film Properties with Nitrogen Doping Levels

XU Jiawei1, DENG Jinxiang1, KONG Le1, MENG Xue1, ZHANG Qing1, WU Rui1, TIAN Kun1, LIU Weiman1, ZHAI Weijian1, YANG Xiaolei2   

  1. 1. School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China;
    2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2025-10-16 Published:2026-07-27

Abstract: Addressing the challenge of p-type doping in gallium oxide, this study prepared β-Ga2O3 films with varying nitrogen concentrations on Si and quartz substrates via radio-frequency magnetron sputtering. The effects of nitrogen doping on the structure, optical, and electrical properties were systematically investigated. The results indicated that nitrogen doping did not alter the fundamental crystal structure of β-Ga2O3 but significantly modulated its optical bandgap, which decreased from 4.92 to 4.78 eV with increasing N content. Hall-effect measurements revealed that nitrogen doping effectively tuned the carrier concentration and mobility, achieving a conversion from n-type to p-type conductivity at a specific doping level. Furthermore, photoelectric characterizations demonstrated a non-monotonic influence of nitrogen doping on the UV photoresponse of β-Ga2O3 metal-semiconductor-metal devices. Optimal nitrogen doping effectively enhanced the photo-to-dark current ratio and detection performance by suppressing dark current and optimizing carrier behavior.

Key words: RF magnetron sputtering, N-doped β-Ga2O3 thin films, optical properties, electrical properties

CLC Number:  O469

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