Abstract: Sb-doped ZnO targets with different ratios were prepared by solid-state reaction, and Zn_1-xSb_xO thin films were prepared on Si(100) substrate by pulsed laser deposition(PLD) method. The structure and properties of the films were characterized by XRD and photoluminescence(PL), and the effects of Sb doping concentration and growth temperature on the crystalline quality and luminescence properties of the films were investigated. The results show that compared with the PL spectra of pure ZnO, it is found that the ZnSbO film exhibit UV peaks,and the intensity of all emission peaks increase relatively with the increasing of Sb concentration. For Zn_0.98Sb_0.02O thin films, the UV and blue light emission intensities of the films are changed by different substrate growth temperatures, and the film has the best crystallization quality and the strongest emission front at 500℃. For Zn_0.98Sb_0.02O thin film grown at 500℃,When the wavelength of the excitation light source changes from 325nm to 300nm, the peak position shifts red and the intensity ratio of UV peak to blue front changed from 1∶3 to 12∶1. According to the experimental results, light-emitting devices with different wavelength and different intensity can be prepared through changing the doping concentration of Sb, the growth temperature, and the length of the excitation light source.

Key words: PLD method, Zn_1-xSb_xO film, photoluminescence, defect complex Sb_Zn-2V_Zn, non-radiation complex