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VACUUM ›› 2020, Vol. 57 ›› Issue (3): 30-33.doi: 10.13385/j.cnki.vacuum.2020.03.07

• Thin Film • Previous Articles     Next Articles

Development of CVD Reaction Furnance for Graphene Preparation

GAO Chao, ZHANG Ji-feng, TANG Rong   

  1. Beijing Vacuum Electronics Research Institute, Beijing 100016, China
  • Received:2019-10-21 Published:2020-06-18

Abstract: This paper introduces the process principle and technical characteristics of CVD reaction furnace for graphene preparation. Taking one of the as-developed CVD reaction furnace as an example, the design ideas and characteristics of the equipment are elaborated in detail. The equipment adopts advanced temperature control technology to control the heater′s rapid heating, and realizes the automatic control of chamber pressure in the process by closed-loop control. It has the advantages of high control accuracy, fast response and good consistency.

Key words: graphene, CVD, temperature control, reactor pressure regulation, closed-loop control

CLC Number: 

  • TB43
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