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VACUUM ›› 2019, Vol. 56 ›› Issue (4): 24-30.doi: 10.13385/j.cnki.vacuum.2019.04.06

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In-situ Growth of Graphene on Cemented Carbide through Amorphous SiC

RAN Biao, LIU Fei, YU Xiang   

  1. School of Mechanical Engineering and Automation, Beihang University, Beijing 100191, China
  • Received:2018-12-14 Published:2019-08-22

Abstract: Graphene is a thin film material with six angle honeycomb layered structure, exhibiting an ultralow friction coefficient in vacuum. Aiming at the lubrication problem of cemented carbide drilling tool in space drilling, amorphous SiC thin films were deposited on cemented carbide substrates by magnetron sputtering, and in situ growth of graphene on cemented carbide was obtained by the bonded phase Co. This paper demonstrated the effects of annealing temperature, annealing time and C/Si atomic ratio on the quality of graphene, and summarized the mechanism of Co catalyzed amorphous SiC in the preparation of graphene. Which provided a theoretical basis for graphene in the application of vacuum drilling tool.

Key words: graphene, annealing temperature, annealing time, C/Si atom ratio

CLC Number: 

  • TB43
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