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VACUUM ›› 2023, Vol. 60 ›› Issue (3): 1-4.doi: 10.13385/j.cnki.vacuum.2023.03.01

• Thin Film •     Next Articles

Effect of Sputtering Voltage on Microstructure and Properties of Cu Foils Deposited by High Power Impulse Magnetron Sputtering

YU Kang-yuan, HE Yu-dan, YANG Bo, LUO Jiang-shan   

  1. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
  • Received:2023-01-06 Online:2023-05-25 Published:2023-05-30

Abstract: Copper(Cu) foils were deposited by high power impulse magnetron sputtering(HiPIMS) method. The effects of sputtering voltage on the microstructure and properties of the Cu foils were investigated. The results show that the Cu foils deposited with the sputtering voltages of 700-950V present (111) crystal preferred orientation obviously, their grain sizes are between 27.7nm and 36.5nm, and the relative densities are between 96.1% and 98.5%, which is distinctly superior to that of the Cu foils prepared by ordinary DC magnetron sputtering. With the increase of sputtering voltage, the Cu foil gradually changes from ductility to brittleness, and the resistivity gradually decreases to 2.38μΩ·cm, which is close to the solid-state resistivity of pure Cu.

Key words: HiPIMS, Cu foil, microstructure, relative density, electrical resistivity

CLC Number:  TB742;O484

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