欢迎访问沈阳真空杂志社 Email Alert    RSS服务

VACUUM ›› 2023, Vol. 60 ›› Issue (4): 24-28.doi: 10.13385/j.cnki.vacuum.2023.04.05

• Thin Film • Previous Articles     Next Articles

Improvement of the Electrical Performance and Stability of InZnO Material and TFT by Oxygen Plasma Processing

HUANG Chuan-xin1, XIN Ji-ying2, TIAN Zhong-jun1, WANG Meng1, LÜ Kai-kai1, LIANG Lan-ju1, LIU Yun-yun1   

  1. 1. College of Optoelectronic Engineering, Zaozhuang University, Zaozhuang 277160, China;
    2. Back Office, Zaozhuang University, Zaozhuang 277160, China
  • Received:2022-11-05 Online:2023-07-25 Published:2023-07-26

Abstract: Oxide thin film transistors(TFT) are the core driving components of active matrix organic light-emitting diodes, and are the key technology for developing new displays today. They have broad application prospects in flat panel displays. However, there are a large number of defect states in oxide semiconductors caused by oxygen vacancies, which destroy the performance and stability of TFT device, and become a bottleneck technical problem for its commercialization. Therefore, IZO TFT was prepared by RF-sputtering and treated with O2 plasma to study the effects of O2 plasma treatmert on IZO film and device performance and stability. The results show that after plasma treatment, the mobility of IZO TFT increases from 8.2cm2/（V·s） to 9.5cm2/（V·s）, the threshold voltage changes from -3.2V to -5.1V, the sub-threshold swing decreases from 0.45V/decade to 0.38V/decade, and the switch ratio changes from 2.3×107 to 4.4×107. Under negative light bias, the threshold voltage drift of the device reduces from 7.1V to 3.2V. The threshold voltage drift of the device decreases from 12.5V to 6.4V when aging at 100℃. O2 plasma treatment can effectively improve the electrical performance and stability of IZO TFT.

Key words: thin film transistor, RF sputtering, O2 plasma treatment, defect, stability

CLC Number:  O539;TN386

[1] ZHU Y, HE Y L, JIANG S S, et al.Indium-gallium-zinc- oxide thin-film transistors: materials, devices, and applications[J]. Journal of Semiconductors, 2021, 42(3): 21-39.
[2] CHEN Q Z, SHI C Y, ZHAO M J, et al.Performance of transparent indium-gallium-zinc oxide thin film transistor prepared by all plasma enhanced atomic layer deposition[J]. IEEE Transactions on Electron Devices, 2023, 44(3): 448-451.
[3] NOMURA K, OHTA H, TAKAGI A, et al.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 2004, 432: 488-492.
[4] LEE S, PARK J, YANG G W, et al.Analysis of a-InGaZnO TFT threshold voltage instability and mobility boosting by current stress at a cryogenic temperature[J]. IEEE Electron Device Letters, 2023, 44(1): 88-91.
[5] WANG C, PENG C, WEN P, et al.Improvement of performance of back channel etching InGaZnO thin-film transistors by CF4 plasma treatment[J]. IEEE Transactions on Electron Devices, 2023, 70(4): 1687-1691.
[6] CHANG C H, LIU P T.Investigation on plasma treatment for transparent Al-Zn-Sn-O thin film transistor application[J]. Thin Solid Films, 2013, 549: 36-41.
[7] PU H F, ZHOU Q F, YUE L, et al.Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors[J]. Applied Surface Science, 2013, 283: 722-726.
[8] LIU P, CHEN T P, LIU Z, et al.Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films[J]. Thin Solid Films, 2013, 545: 533-536.
[9] FABER H, HIRSCHMANN J, KLAUMUÜNZER M, et al. Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle-based thin-film transistors[J]. ACS Applied Materials & Interfaces, 2012, 4(3): 1693-1696.
[10] YANG B S, PARK S, OH S, et al.Improvement of the photo-bias stability of the Zn-Sn-O field effect transistors by an ozone treatment[J]. Journal of Materials Chemistry, 2012, 22(22): 10994-10998.
[11] XU H Y, DING X W, QI J, et al.A study on solution-processed Y2O3 films modified by atomic layer deposition Al2O3 as dielectrics in ZnO thin film transistor[J]. Coatings, 2021, 11(8): 969.
[12] FAN C L, YANG T H, CHIU P C, et al.Organic thin-film transistor performance improvement using ammonia(NH3) plasma treatment on the gate insulator surface[J]. Solid-State Electronics, 2009, 53(2): 246-250.
[13] XU W D, ZHANG G Q, FENG X J.Effects of atomic-layer-deposition temperature on the properties of Al2O3 insulators and InAlZnO thin-film-transistors with dual-active-layer structure[J]. Applied Surface Science, 2021, 578: 151987.
[14] LIU M Y, QIN F, ROTHSCHILD M, et al.The effect of bias stress on the performance of amorphous InAlZnO-based thin film transistors[J]. Journal of Electronic Materials, 2022, 51: 1813-1819.
[15] CHOWDHURY M, MIGLIORATO P, JIN J.Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors[J]. Applied Physics Letters, 2013, 102(14): 143506.
[16] FLEWITT A J, POWELL M J.A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination[J]. Journal of Applied Physics, 2014, 115(13): 134501.
[17] CHEN T C, CHANG T C, HSIEH T Y, et al.Analyzing the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress[J]. Surface & Coatings Technology, 2013, 231: 465-470.
[18] KIM S, KIM H, KIM K, et al.Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing[J]. Microelectronics Reliability, 2021, 116: 113963.
[19] PARK S Y, LEE S Y.Investigation of the stability and the transparency of oxide thin film transistor with bi-layer channels and oxide/metal/oxide multilayer source/drain electrodes[J]. Transactions on Electrical and Electronic Materials, 2022, 23: 187-192.
[20] RYU M K, PARK S, HWANG C S, et al.Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations[J]. Solid-State Electronics, 2013, 89: 171-176.
[1] ZHU Jian-hua, PAN Jing, YUE Jian-ming, HAO Li-ping, ZHI Peng-wei, JIA Zhe. Structure and Luminescence Properties of Zn1-xSbxO Films Grown at Different Temperatures [J]. VACUUM, 2023, 60(3): 18-23.
[2] WU Shuai, LIU Shuang, QIN Li-zhao, ZHANG Xu, ZHANG Tong-hua, LIAO Bin, WANG Ke-ping. Study on Thermal Stability of CrCN Films Prepared by FCVAD Technology [J]. VACUUM, 2022, 59(5): 14-19.
[3] LIU Lei. Stability Analysis of Linear Friction Welding Friction Vibration Servo System [J]. VACUUM, 2021, 58(2): 82-85.
[4] CHAI Hao, JIA Jun-wei, WANG Bin, LI Peng, CUI Shuang, FENG Xu, LI Wei, LIU Zhan, LI Shao-fei, CHEN Quan. Design and Characteristic Study on Compact Microwave ECR Plasma Source [J]. VACUUM, 2021, 58(1): 6-9.
[5] XIA Zhu-jie, ZHANG Zhi-guo, WANG Hong-li, SU Yi-fan, TANG Peng, LIN Song-sheng, DAI Jiang-ming, SHI Qianb. Preparation and Electrochromic Properties of WO3 Thin Films [J]. VACUUM, 2020, 57(2): 47-52.
[6] WU Zhong-can, LIU Liang-liang, TANG Wei; YANG Chao, MA Zheng-yong. Fabrication and Properties of Robust Superhydrophobic F-DLC Coatings [J]. VACUUM, 2019, 56(6): 30-35.
[7] SUN Chang-jin, ZHAO Yu-hui, WANG Zhi-guo, WU Jia-jun, HE Zhen-feng, WANG Xiao-fan. Development Status and Trend Research of Nondestructive Testing for Additive New-conceptual Structure [J]. VACUUM, 2019, 56(4): 65-70.
[8] JIANG Cai-wei, LIU Jian-min, HU Xian-jun. Cause analysis and improvement measures of common defects in Fe-Cr-Al alloy ingots smelted by VIM furnace [J]. VACUUM, 2019, 56(2): 74-77.
[9] SUN Zhi-ming, HE Chao, ZHANG Ying-li, ZHU Zhi-peng, YUE Xiang-ji, ZHANG Bin, BA De-chun. Design and finite element analysis of large-scale horizontal vacuum container [J]. VACUUM, 2019, 56(2): 26-30.
Viewed
Full text


Abstract

Cited
  Shared   
  Discussed   
[1] LI De-tian, CHENG Yong-jun, ZHANG Hu-zhong, SUN Wen-jun, WANG Yong-jun, SUN Jian, LI Gang, . Preparations and applications of carbon nanotube field emitters[J]. VACUUM, 2018, 55(5): 1 -9 .
[2] ZHOU Bin-bin, ZHANG jian, HE Jian-feng, DONG Chang-kun. Carbon nanotube field emission cathode based on direct growth technique[J]. VACUUM, 2018, 55(5): 10 -14 .
[3] CHAI Xiao-tong, WANG Liang, WANG Yong-qing, LIU Ming-kun, LIU Xing-zhou, GAN Shu-yi. Operating parameter data acquisition system for single vacuum pump based on STM32F103 microcomputer[J]. VACUUM, 2018, 55(5): 15 -18 .
[4] LI Min-jiu, XIONG Tao, JIANG Ya-lan, HE Yan-bin, CHEN Qing-chuan. 20kV high voltage based on double transistor forward converter pulse power supply for metal deburring[J]. VACUUM, 2018, 55(5): 19 -24 .
[5] LIU Yan-wen, MENG Xian-zhan, TIAN Hong, LI Fen, SHI Wen-qi, ZHU Hong, GU Bing. Test of ultra high vacuum in space traveling-wave tube[J]. VACUUM, 2018, 55(5): 25 -28 .
[6] XU Fa-jian, WANG Hai-lei, ZHAO Cai-xia, HUANG Zhi-ting. Application of chemical gases vacuum-compression recovery system in environmental engineering[J]. VACUUM, 2018, 55(5): 29 -33 .
[7] XIE Yuan-hua, HAN Jin, ZHANG Zhi-jun, XU Cheng-hai. Discussion on present situation and development trend of vacuum conveying[J]. VACUUM, 2018, 55(5): 34 -37 .
[8] SUN Li-zhi, YAN Rong-xin, LI Tian-ye, JIA Rui-jin, LI Zheng, SUN Li-chen, WANG Yong, WANG Jian, . Research on distributing law of Xenon in big accumulation chamber[J]. VACUUM, 2018, 55(5): 38 -41 .
[9] HUANG Si, WANG Xue-qian, MO Yu-shi, ZHANG Zhan-fa, YING Bing. Experimental study on similarity law of liquid ring compressor performances[J]. VACUUM, 2018, 55(5): 42 -45 .
[10] CHANG Zhen-dong, MU Ren-de, HE Li-min, HUANG Guang-hong, LI Jian-ping. Reflectance spectroscopy study on TBCs prepared by EB-PVD[J]. VACUUM, 2018, 55(5): 46 -50 .
辽ICP备06004570号-4
Copyright © VACUUM, All Rights Reserved.
Tel: （024）24134406 24110136 24121929　Fax: （024） 24121929　E-mail: zkzk1964@126.com
Powered by Beijing Magtech Co. Ltd