真空 ›› 2020, Vol. 57 ›› Issue (3): 34-36.doi: 10.13385/j.cnki.vacuum.2020.03.08
沈洪雪1, 李刚1, 姚婷婷1, 金葆琪2, 金克武1, 王天齐1
SHEN Hong-xue1, LI Gang1, YAO Ting-ting1, JIN Bao-qi2, JIN Ke-wu1, WANG Tian-qi1
摘要： 以高纯石墨为靶材,Ar、N2为溅射和反应气体,采用直流磁控溅射法,制备了一系列不同N掺杂量的氮化碳薄膜。利用XRD、SEM、分光光度计、高阻抗率计等检测手段对薄膜的成分、形貌、透过率、电阻率等进行表征。结果表明：CN薄膜已初具晶型;随着溅射腔室中N2含量的增加,薄膜中N含量先增加后减少最后趋于稳定状态,薄膜的电阻率维持在（10-5~1015）Ω·cm范围内变动;透过率基本维持在85%~91%之间。N的掺入对薄膜中的sp3杂化C起到了稳定的作用。
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