真空 ›› 2022, Vol. 59 ›› Issue (1): 33-39.doi: 10.13385/j.cnki.vacuum.2022.01.07
张杰, 邓金祥, 徐智洋, 孔乐, 段苹, 王晓蕾, 孟军华, 李瑞东, 张晓霞, 孙旭鹏, 杨子淑
ZHANG Jie, DENG Jin-xiang, XU Zhi-yang, KONG Le, DUAN Ping, WANG Xiao-lei, MENG Jun-hua, LI Rui-dong, ZHANG Xiao-xia, SUN Xu-peng, YANG Zi-shu
摘要: 氧化镓(Ga2O3)是一种宽禁带的半导体材料,超大的禁带宽度(4.9eV)、较高击穿电场强度和高热稳定性,使其成为一种很有应用前景的材料。本文以p型硅纳线阵列(p-SiNWs)为衬底,使用磁控溅射法制备了β-Ga2O3/p-SiNWs异质结,探究了其光学与电学性质。与纯Si相比,p-SiNWs表现出优良的“陷光”特性,其反射系数约为纯Si的1/6,且随着p-SiNWs长度的增加,反射系数逐渐降低。室温下光致发光光谱(PL)测试发现,异质结在551nm附近出现典型的绿色发射峰。β-Ga2O3/p-SiNWs异质结具有明显的整流特性,在V=1.40V时其整流系数高达1724,随着p-SiNWs长度增加异质结理想因子逐渐增加,最佳理性因子为1.98。通过计算 logI-logV图对其电荷传输机制进行了探究。退火可以提高β-Ga2O3薄膜的结晶度,从而提高异质结的电学特性。
中图分类号:
[1] DU X, MEI Z, LIU Z, et al.Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors[J]. Advanced Materials, 2009, 21(45): 4625-4630. [2] GUO D Y, WU Z P, AN Y H, et al.Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in [3] ZHENG W, LIN R C, ZHU Y M, et al.Vacuum ultraviolet photodetection in two-dimensional oxides[J]. ACS Applied Materials & Interfaces, 2018, 10(24): 20696-20702. [4] FANG X S, HU L F, HUO K F, et al.New ultraviolet photodetector based on individual Nb2O5 nanobelts[J]. Advanced Functional Materials, 2011, 21(20): 3907-3915. [5] GUO D Y, LIU H, LI P G, et al.Zero-power-consumption solar-blind photodetector based on [6] XIAO Y F, LIU W, LIU C, et al.Large-area vertically stacked MoTe2/ [7] WANG Y H, YANG Z, LI H, et al.Ultrasensitive flexible solar-blind photodetectors based on graphene/amorphous Ga2O3 Van Der Waals Heterojunctions[J]. ACS Applied Materials & Interfaces, 2020, 12(42): 47714-47720. [8] ATILGAN A, YILDIZ A, HARMANCI U, et al. [9] YU J G, YU M, WANG Z, et al.Improved photoresponse performance of self-powered [10] HUANG Z, GEYER N, WERNER P, et al.Metal-assisted chemical etching of silicon: A review.[J]. Advanced Materials, 2011, 23(2): 285-308. [11] ZHANG M L, PENG K Q, FAN X, et al.Preparation of large-area uniform silicon nanowires arrays through metal-assisted chemical etching[J]. Journal of Physical Chemistry C, 2008, 112(12): 4444-4450. [12] CHANG S W, CHUANG V P, BOLES S T, et al.Metal-catalyzed etching of vertically aligned polysilicon and amorphous silicon nanowire arrays by etching direction confinement[J]. Advanced Functional Materials, 2010, 20(24): 4364-4370. [13] JANGIR R, PORWAL S, TIWARI P, et al.Correlation between surface modification and photoluminescence properties of [14] LI S F, JIAO S J, WANG D B, et al. The influence of sputtering power on the structural,morphological and optical properties of beta-Ga2O3 thin films[J]. Journal of Alloys and Compounds, 2018, 753: 186-191.14 [15] QI X, SONG Y, SHENG Y, et al.Controllable synthesis and luminescence properties of TiO2: Eu3+ nanorods, nanoparticles and submicrospheres by hydrothermal method[J]. Optical Materials, 2014, 38: 193-197. [16] YAN S, WAN L, LI Z, et al.Synthesis of a mesoporous single crystal Ga2O3 nanoplate with improved photoluminescence and high sensitivity in detecting CO[J]. Chemical Communications, 2010, 46(34): 6388-6390. [17] YANG H Q, SHI R Y, YU J, et al.Single-crystalline [18] CAO L, LI M K, YANG Z, et al.Synthesis and characterization of dentate-shaped [19] WU X C, SONG W H, HUANG W D, et al.Crystalline gallium oxide nanowires: Intensive blue light emitters[J]. Chemical Physics Letters, 2000, 328(1): 5-9. [20] LAURENT, BINET, DIDIER, et al. Origin of the blue luminescence of [21] KIM J K, CHO K, KIM T Y, et al.p-n heterojunction diodes[J]. Scientific Reports, 2016, 6: 36775. [22] AYDIN M E, TUERUET A.The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts[J]. Microelectronic Engineering, 2007, 84(12): 2875-2882. [23] CHEN L, DENG J X, GAO H L, et al.Organometallic hybrid perovskites: structural, optical characteristic and application in Schottky diode[J]. Journal of Materials Science Materials in Electronics, 2016, 27(5): 4275-4280. [24] GHOSH R, BASAK D.Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/p-Si heterojunction[J]. Applied Physics Letters, 2007, 90(24): 243106. [25] YE J D, GU S L, ZHU S M, et al.Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions[J]. Applied Physics Letters, 2006, 88(18): 3257. [26] DUTTA M, BASAK D. p-ZnO/n-Si heterojunction: Sol-gel fabrication,photoresponse properties, and transport mechanism[J]. Applied Physics Letters, 2008, 92(21): 383. |
No related articles found! |
|