钽氮化合物电阻薄膜的研究进展*

doi:10.13385/j.cnki.vacuum.2022.06.06

真空 ›› 2022, Vol. 59 ›› Issue (6): 34-39.doi: 10.13385/j.cnki.vacuum.2022.06.06

钽氮化合物电阻薄膜的研究进展^*

杨曌^1,2, 付振晓^1,2, 沓世我^1,2, 王鑫豪^1,2, 姚日晖³, 宁洪龙³

1.广东风华高新科技股份有限公司,广东肇庆 526060;
2.新型电子元器件关键材料与工艺国家重点实验室,广东肇庆 526060;
3.华南理工大学材料科学与工程学院,广东广州 510641

收稿日期:2022-02-24 出版日期:2022-11-25 发布日期:2022-12-05
通讯作者: 姚日晖,副教授;宁洪龙,研究员。
作者简介:杨曌（1985-）,女,云南省昆明市人,博士研究生。
基金资助:
^*广东省重点领域研发计划（2020B010183002）,广东省基础与应用基础研究重大项目（No.2019B030302007）,中央高校基本科研业务费专项资金（2020ZYGXZR060）,季华实验室自主立项项目“AM-Micro/Mini LED大尺寸显示器关键技术研究”（X190221TF191）,2021年广东大学生科技创新培育专项资金（“攀登计划”专项资金pdjh2021b0036）,大学生创新创业训练计划项目（No.S202110561184）,国家高新技术研究发展计划项目（2013AA712032）

Advances in Tantalum Nitride Resistors Thin Film Materials

YANG Zhao^1,2, FU Zhen-xiao^1,2, TA Shi-wo^1,2, WANG Xin-hao^1,2, YAO Ri-hui³, NING Hong-long³

1. Guangdong Fenghua Advanced Technology Holding Co., Ltd., Zhaoqing 526060, China;
2. State Key Laboratory of Advanced Materials and Electronic Components, Zhaoqing 526060, China;
3. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China

Received:2022-02-24 Online:2022-11-25 Published:2022-12-05

摘要/Abstract

摘要： 钽氮化合物薄膜材料具有电阻温度系数小、化学稳定性高、功率耐受性好和阻值可调范围大等优点,是高性能电阻薄膜的优选材料。本文综述了钽氮化合物薄膜材料的研究进展,从材料的制备工艺参数、后处理方式、微观相结构和元素掺杂等出发,挖掘了获得高性能薄膜电阻的核心影响因素;结合国内外研究现状,对钽氮化合物薄膜电阻进一步发展存在的难点进行了分析。钽氮化合物薄膜已经成为电子功能材料发展的关键之一,通过元素掺杂和后处理改善薄膜质量将成为进一步拓展其应用领域的重要手段。

关键词: 电子功能薄膜, 钽氮化物, 薄膜电阻, 物相

Abstract: Tantalum-nitrogen compound thin film materials have the advantages of small resistance temperature coefficient, high chemical stability, good power tolerance and wide adjustable resistance range, which are the preferred materials for high performance resistive thin films. This paper reviews the research progress of tantalum-nitrogen compound functional thin film materials, and explores the core influencing factors for obtaining high performance thin film resistance from the preparation process parameters, post-processing methods, microscopic phase structure and element doping of the materials. Combined with the domestic and international research status, the continued development of tantalum-nitrogen compound thin film resistance is analyzed. In conclusion,tantalum-nitrogen compound thin films have become one of the keys to the development of electronic functional materials, and improving the film quality through element doping and post-treatment will be important means to further expand their application fields.

Key words: electronic functional film, tantalum nitride, thin film resistance, physical phase

中图分类号:

TN304

杨曌, 付振晓, 沓世我, 王鑫豪, 姚日晖, 宁洪龙. 钽氮化合物电阻薄膜的研究进展^*[J]. 真空, 2022, 59(6): 34-39.

YANG Zhao, FU Zhen-xiao, TA Shi-wo, WANG Xin-hao, YAO Ri-hui, NING Hong-long. Advances in Tantalum Nitride Resistors Thin Film Materials[J]. VACUUM, 2022, 59(6): 34-39.

参考文献

[1] 张丽娟, 王芳, 孙承松, 等. 高稳定Ni-Cr薄膜电阻的研究[J]. 微处理机, 2005, 26(4): 7-8.
[2] 王峰, 陈桂梅, 张丽, 等. 溅射Ni-Cr薄膜电阻的研究[C]//第十三届全国电子束, 离子束, 光子束学术年会. 长沙: 中国电子学会, 2005.
[3] 黄桂荣, 何小琦, 曾自力. 国内外碳膜电阻器对比分析的研究[C]//中国电子学会电子产品可靠性与质量管理学会第三届学术年会. 九江: 中国电子学会电子产品可靠性与质量管理学会, 1985.
[4] MENDIZABAL L, LOPEZ A, BAYÓN R, et al. Tribocorrosion response in biological environments of multilayer TaN films deposited by HPPMS[J]. Surface and Coatings Technology, 2016, 295: 60-69.
[5] LIU K Y, LEE J W, WU F B.Fabrication and tribological behavior of sputtering TaN coatings[J]. Surface and Coatings Technology, 2014, 259: 123-128.
[6] MA G J, LIN G Q, GONG S L, et al.Mechanical and corrosive characteristics of Ta/TaN multilayer coatings[J]. Vacuum, 2013, 89(3): 244-248.
[7] CHEN H R, CHEN Y C, CHANG T C, et al, The manipulation of temperature coefficient resistance of TaN thin-film resistor by supercritical CO₂ fluid[J]. IEEE Electron Device Letters, 2015, 36(3): 271-273.
[8] 梅显秀, 王煜明. 离子束辅助沉积制备氮化钽薄膜[J]. 大连理工大学学报, 1995, 35(5): 623-627.
[9] 胡南山. 高频反应溅射氮化钽铝薄膜[J]. 电子元件与材料, 1983(4): 74-78.
[10] 张德元, 林勤, 陆德平, 等. 钽表面渗氮层的氧化行为[J]. 中国表面工程, 2000, 13(3): 25-27.
[11] FU B, GAO L.Tantalum nitride/copper nanocomposite with zero temperature coefficient of resistance[J]. Scripta Materialia, 2006, 55(6): 521-524.
[12] 刘飞飞, 唐云, 张万里, 等. 热处理对TaN薄膜电性能的影响[J]. 电子元件与材料, 2011, 30(2): 47-49.
[13] 贾振宇, 朱嘉琦, 曹世成. 反应磁控溅射制备氮化钽扩散阻挡层的研究[J]. 真空科学与技术学报, 2012, 32(8): 96-102.
[14] CAO Q T, SONG Z M, WANG F, et al.Failure analysis of TaN thin film resistors for microwave circuits[C]// Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA). Suzhou: IEEE, 2013: 749-753.
[15] 梁军生, 陈亮, 王金鹏, 等. 磁控溅射制备氮化钽导电薄膜及其性能研究[J]. 电子元件与材料, 2018, 37(8): 36-39.
[16] 谢贵久, 周国方, 何峰, 等. 氮化钽薄膜压力传感器研究[J]. 微处理机, 2018, 39(2): 13-15.
[17] 杨俊锋, 丁明建, 冯毅龙, 等. 退火温度对氮化钽薄膜电阻器性能的影响[J]. 广州化工, 2018, 46(14): 49-52.
[18] 陈国平, 徐敏生, 邵力为. 氮化钽薄膜稳定性的研究[J]. 真空科学与技术, 1988(1): 45-48.
[19] 邹文秀. 氮化钽薄膜电阻器性能的研究[J]. 电子元件与材料, 1985(2): 12-16.
[20] 王超杰, 蒋洪川, 张万里, 等. 氮流量对TaN薄膜微结构及性能的影响[J]. 功能材料与器件学报, 2010, 16(1): 85-88.
[21] 杨文茂, 张琦, 陶涛, 等. 非平衡磁控溅射沉积Ta-N薄膜的结构与电学性能研究[J]. 功能材料, 2006, 37(10): 1593-1595.
[22] 周平贤, 刘兴钊, 李言荣. 磁控溅射Ta-N薄膜的结构和电性能[C]//航空试验测试技术峰会. 南昌: 中国航空学会, 2008, 27: 322-324.
[23] 冷永祥, 黄楠, 杨萍. 氮化钽薄膜的制备与结构研究[J]. 材料工程, 1998(9): 19-21.
[24] NIE H, XU S, WANG S, et al.Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering[J]. Applied Physics A, 2001, 73(2): 229-236.
[25] CHUNG G S.Characteristics of tantalum nitride thin film strain gauges for harsh environments[J]. Sensors and Actuators, 2007, 135(2): 355-359.
[26] SHEN H, RAMANATHAN R.Fabrication of a low resistivity tantalum nitride thin film[J]. Microelectronic Engineering, 2006, 83(2): 206-212.
[27] STAVREV M, FISCHER D, WENZEL C, et al.Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films[J]. Thin Solid Films, 1997, 307(1/2): 79-88.
[28] 蒋洪川, 向阳, 王超杰, 等. 热处理对TaN薄膜微结构及电性能的影响[J]. 材料导报, 2008, 22(12): 266-268.
[29] STAMPFL C, FREEMAN A J.Stable and metastable structures of the multiphase tantalum nitride system[J]. Physical Review B, 2005, 71(2): 024111.
[30] SHIN-ICHI N, MASASHI N, TADAHIRO O.Thin and low-resistivity Tantalum Nitride diffusion barrier and giant-grain Copper interconnects for advanced ULSI metallization[J]. Japanese Journal of Applied Physics, 1999, 38: 2401-2405.
[31] ZAMAN A, SHEN Y, MELETIS E I.Microstructure and mechanical property investigation of TaSiN thin films deposited by reactive magnetron sputtering[J]. Coatings, 2019, 9(5): 338.
[32] 曲喜新. 现代电阻薄膜[J]. 电子元件与材料, 1995, 14(4): 1-9
[33] SHIN C S, KIM Y W, GALL D, et al.Phase composition and microstructure of polycrystalline and epitaxial TaN_x layer grown on oxidized Si(001)and MgO(001)by reactive magnetron sputter deposition[J]. Thin Solid Films, 2002, 402(1/2): 172-182.
[34] 王磊. TaN薄膜及高频大功率薄膜负载设计与制备研究[D]. 成都: 电子科技大学, 2013.
[35] 蒋洪川, 王超杰, 张万里, 等. 掺Al对TaN薄膜微结构及电性能的影响[J]. 电子科技大学学报, 2010, 39(3): 440-442.
[36] 牛旭博, 张怀武, 黄子宽. Cu掺杂对TaN薄膜的电性能影响研究[J]. 压电与声光, 2014, 36(3): 409-411.
[37] WANG C M, HSIEH J H, FU Y Q, et al.Electrical properties of TaN-Cu nanocomposite thin films[J]. Ceramics International, 2004, 30(7): 1879-1883.

Metrics

Viewed

Full text

Abstract

Cited

Shared

Discussed

钽氮化合物电阻薄膜的研究进展^*

Advances in Tantalum Nitride Resistors Thin Film Materials

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 1

Metrics

本文评价

推荐阅读 10