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真空 ›› 2024, Vol. 61 ›› Issue (4): 17-21.doi: 10.13385/j.cnki.vacuum.2024.04.04

• 薄膜 • 上一篇    下一篇

不同试验条件对非晶硒薄膜中载流子迁移率的影响*

李瑞东1, 金大利2, 张梅东1, 于立苹3, 王建伟4   

  1. 1.防灾科技学院 基础课教学部,河北 三河 065201;
    2.天津市地震局,天津 300201;
    3.天津市信息工程学校,天津 301900;
    4.河北省地矿局第七地质大队,河北 三河 065201
  • 收稿日期:2023-12-12 出版日期:2024-07-25 发布日期:2024-07-29
  • 作者简介:李瑞东(1982-),男,天津蓟州人,博士研究生,副教授。
  • 基金资助:
    * 廊坊市科技支撑计划项目(2022011063)

Effect of Different Experimental Conditions on Charge Carrier Mobility of α-Se Films

LI Rui-dong1, JIN Da-li2, ZHANG Mei-dong1, YU Li-ping3, WANG Jian-wei4   

  1. 1. Department of Fundamental Course, Institute of Disaster Prevention, Sanhe 065201, China;
    2. Tianjin Earthquake Agency, Tianjin 300201, China;
    3. Tianjin Information Engineering School, Tianjin 301900, China;
    4. No.7 Geological Brigade of Hebei Geology and Mineral Exploration Bureau, Sanhe 065201, China
  • Received:2023-12-12 Online:2024-07-25 Published:2024-07-29

摘要: 非晶态硒(α-Se)属于无机弱电导材料,被认为是X射线医学成像和无损检测方面最有前途的探测材料之一,其载流子特性对应用至关重要。本文在恒温条件下制备了非晶态硒本征薄膜,利用SEM、XRD测试了薄膜的微观形貌和晶体结构,利用渡越时间(TOF)方法研究了温度、取样电阻及光脉冲能量对载流子迁移率的影响。结果表明:在298~338K的温度范围内,非晶硒的载流子输运规律符合浅陷阱模型;取样电阻不大于5 kΩ,光脉冲能量不大于3.5 μJ时,载流子渡越时间保持恒定,测试结果可靠。

关键词: 光电子学, 非晶硒薄膜, 渡越时间方法, 迁移率

Abstract: α-Se is an inorganic weak conductive material, and it is one of the most promising materials in the field of X-ray medical imaging and nondestructive testing, the carrier properties are of vital importance to its application. The α-Se intrinsic film was prepared under the condition of constant temperature, the surface microstructure and crystal structure of the film were tested using SEM and XRD. The effects of temperature, sampling resistance, and light pulse energy on the carrier mobility were studied by the time-of-flight method. The results show that in the temperature range of 298-338 K, the carrier transport of the α-Se is consistent with the shallow trap model. The carrier transit time is constant when the sampling resistance is not more than 5 kΩ and the optical pulse energy is not more than 3.5 μJ.

Key words: optoelectronics, α-Se film, time-of-flight method, mobility

中图分类号:  O484.3

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