高分辨率钼/硅纳米多层膜TOF-SIMS和Pulsed-RF-GDOES深度谱的定量分析*

doi:10.13385/j.cnki.vacuum.2023.01.03

真空 ›› 2023, Vol. 60 ›› Issue (1): 17-22.doi: 10.13385/j.cnki.vacuum.2023.01.03

高分辨率钼/硅纳米多层膜TOF-SIMS和Pulsed-RF-GDOES深度谱的定量分析^*

马泽钦¹, 李海鸣², 庄妙霞², 李婷婷¹, 李镇舟², 蒋洁¹, 连松友¹, 王江涌^1,3, 徐从康^1,3

1.汕头大学理学院物理系,广东汕头 515063;
2.汕头大学理学院数学系,广东汕头 515063;
3.广东省半导体材料与器件研究中心,广东汕头 515063

收稿日期:2022-06-27 出版日期:2023-01-25 发布日期:2023-02-07
通讯作者: 王江涌,教授;徐从康,教授。
作者简介:马泽钦（1999-）,男,广东汕头人,本科生。
基金资助:
*广东大学生科技创新培育专项资金资助项目（攀登计划）（pdjh2021b0194）

Quantification of High-resolution TOF-SIMS and Pulsed-RF-GDOES Depth Profiles of Mo/Si Nano-multilayers

MA Ze-qin¹, LI Hai-ming², ZHUANG Miao-xia², LI Ting-ting¹, LI Zhen-zhou², JIANG Jie¹, LIAN Song-you¹, WANG Jiang-yong^1,3, XU Cong-kang^1,3

1. Department of Physics, Shantou University, Shantou 515063, China;
2. Department of Mathmatics, Shantou University, Shantou 515063, China;
3. Center of Semiconductor Materials and Devices, Shantou 515063, China

Received:2022-06-27 Online:2023-01-25 Published:2023-02-07

摘要/Abstract

摘要： 飞行时间二次离子质谱（TOF-SIMS）和脉冲射频辉光放电发射光谱（Pulsed-RF-GDOES）是两种重要的深度剖析技术,前者广泛应用于半导体工业的质量控制,后者主要应用于工业涂层及表面氧（氮）化层的分析。Mo/Si纳米多层膜由于其出色的反射特性被广泛应用于纳米光刻、极紫外显微镜等领域。本文利用原子混合-粗糙度-信息深度（MRI）模型分辨率函数,通过卷积及反卷积方法分别对Mo（3.5nm）/Si（3.5nm）多层膜的TOF-SIMS和Pulsed-RF-GDOES深度谱数据进行了定量分析,获得了相应的膜层结构、膜层间界面粗糙度及深度分辨率等信息。结果表明：GDOES深度剖析产生了较大的溅射诱导粗糙度,SIMS的深度分辨率优于GDOES。

关键词: Pulsed-RF-GDOES, TOF-SIMS, MRI 模型, 深度分辨率, 卷积, 反卷积

Abstract: Time of flight second ion mass spectrometry(TOF-SIMS) and pulsed radio frequency glow discharge optical emission spectrometry(Pulsed-RF-GDOES) are two important depth profiling techniques, the former one is widely used in the fields of semiconductor industry and material science, while the latter one is usually applied to the analysis of industrial coating and surface oxynitride. Mo/Si nano-multilayers have been widely used in nanolithography, soft X-ray/EUV microscopy, solar astronomy and other fields because of their excellent reflection characteristics. In this paper, Pulsed-RF-GDOES and TOF-SIMS depth profiling data of Mo(3.5nm)/Si(3.5nm) nano-multilayer are evaluated quantitatively by the convolution and deconvolution methods with the resolution function of the atomic mixing-roughness-information depth(MRI). The layer structure, interface roughness and depth resolution upon depth profiling are obtained. The results show that GDOES depth profiling yields larger sputtering induced roughness, and the depth resolution of SIMS is better than that of GDOES.

Key words: Pulsed-RF-GDOES, TOF-SIMS, MRI model, depth resolution, convolution, deconvolution

中图分类号:

TB43

马泽钦, 李海鸣, 庄妙霞, 李婷婷, 李镇舟, 蒋洁, 连松友, 王江涌, 徐从康. 高分辨率钼/硅纳米多层膜TOF-SIMS和Pulsed-RF-GDOES深度谱的定量分析^*[J]. 真空, 2023, 60(1): 17-22.

MA Ze-qin, LI Hai-ming, ZHUANG Miao-xia, LI Ting-ting, LI Zhen-zhou, JIANG Jie, LIAN Song-you, WANG Jiang-yong, XU Cong-kang. Quantification of High-resolution TOF-SIMS and Pulsed-RF-GDOES Depth Profiles of Mo/Si Nano-multilayers[J]. VACUUM, 2023, 60(1): 17-22.

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高分辨率钼/硅纳米多层膜TOF-SIMS和Pulsed-RF-GDOES深度谱的定量分析^*

Quantification of High-resolution TOF-SIMS and Pulsed-RF-GDOES Depth Profiles of Mo/Si Nano-multilayers

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