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VACUUM ›› 2022, Vol. 59 ›› Issue (6): 45-50.doi: 10.13385/j.cnki.vacuum.2022.06.08

• Thin Film • Previous Articles     Next Articles

Growth, Characterization of ITO Films Deposited by DC Magnetron Sputtering

ZHANG Jian, QI Zhen-hua, LI Jian-hao, NIU Xia-bin, XU Quan-guo, ZONG Shi-qiang   

  1. School of Mechanical and Power Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China
  • Received:2021-09-30 Online:2022-11-25 Published:2022-12-05

Abstract: The ITO films were deposited at room temperature by DC magnetron sputtering of a lab-made ITO target on organic glass substrates. The photoelectric property of the ITO film was evaluated by changing the process parameters of sputtering power, sputtering pressure, target distance and oxygen-argon flow ratio. The ITO films were characterized with ultraviolet visible near infrared spectroscopy. The results show that the transmittance of ITO films decreases with the increase of sputtering power and target-substrate distance. When the sputtering power is 110W and the target-substrate distance is 70mm, the transmittance and conductivity of ITO films are better. In the near-ultraviolet light band and the near infrared light band, the transmittance of the ITO film decreases as the sputtering pressure increases. When the oxygen-argon flow ratio is 4:30, the ITO film shows the best transmittance and comprehensive performance in the visible light range from 500nm to 600nm.

Key words: ITO thin film, DC magnetron sputtering, sputtering power, sputtering pressure, photoelectric property

CLC Number: 

  • TB43
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