射频反应磁控溅射制备MoS2薄膜结构及光学性能*

doi:10.13385/j.cnki.vacuum.2020.05.03

真空 ›› 2020, Vol. 57 ›› Issue (5): 11-13.doi: 10.13385/j.cnki.vacuum.2020.05.03

射频反应磁控溅射制备MoS₂薄膜结构及光学性能^*

韦贤露, 巩晨阳, 肖剑荣

桂林理工大学理学院,广西桂林 541004

收稿日期:2019-07-20 发布日期:2020-11-06
通讯作者: 肖剑荣,教授。
作者简介:韦贤露（1997-）,男,广西壮族自治区宜州县人,本科。
基金资助:
* 广西自然科学基金资助,项目号：（2017GXNSFAA198121）

Structure and Optical Properties of MoS₂ Thin Films Prepared by RF Reactive Magnetron Sputtering

WEI Xian-lu, GONG Chen-yang, XIAO Jian-rong

College of Science, Guilin University of Technology, Guilin 541004, China

Received:2019-07-20 Published:2020-11-06

摘要/Abstract

摘要： 采用射频反应磁控溅射技术,在不同气压下制备了二硫化钼薄膜。利用扫描电子显微镜、X射线衍射仪、紫外可见光光谱仪等对薄膜的表面形貌、结构和光学性能进行了表征、分析。结果表明：利用射频反应磁控溅射制备的MoS₂薄膜,表面平整、颗粒均匀、致密,缺陷少;沉积气压1.2Pa条件下制备的薄膜结晶度最好;薄膜的光学带隙随沉积气压先增大后减小,1.2Pa时光学带隙最大,为1.69eV。薄膜光学带隙的变化是由沉积气压引起薄膜结晶度变化和形成缺陷不同所致。

关键词: 二硫化钼薄膜, 射频反应磁控溅射, 沉积气压, 晶体结构, 光学带隙

Abstract: Molybdenum disulfide films were prepared under different pressures by RF reactive magnetron sputtering. The surface morphology, structure and optical properties of the films were characterized by scanning electron microscopy, X-ray diffractometry and UV-Vis spectrometer. The results show that the surface of MoS₂ films prepared by RF reactive magnetron sputtering is smooth, uniform and compact with few defects. The films prepared under the deposition pressure of 1.2Pa shows the best crystallinity. The optical band gap of the films increases first and then decreases with the increase of deposition pressure. The optical band gap is the largest at 1.2Pa, which is 1.69eV. The change in the optical band gap of the film is caused by the change in crystallinity of the films and the formation of defects due to the deposition gas pressure.

Key words: molybdenum disulfide films, RF reactive magnetron sputtering, deposition gas pressure, crystal structure, optical band gap

中图分类号:

TB43

韦贤露, 巩晨阳, 肖剑荣. 射频反应磁控溅射制备MoS₂薄膜结构及光学性能^*[J]. 真空, 2020, 57(5): 11-13.

WEI Xian-lu, GONG Chen-yang, XIAO Jian-rong. Structure and Optical Properties of MoS₂ Thin Films Prepared by RF Reactive Magnetron Sputtering[J]. VACUUM, 2020, 57(5): 11-13.

参考文献

[1] Meng Q, Jianrong X, Chen Y G.Thermal annealing effects on the electrophysical characteristics of sputtered MoS₂ thin films by Hall effect measurements[J]. Semiconductor Science and Technology, 2019, 34: 045017.
[2] 李孟阁, 刘文文, 王龙飞, 等. 纳米二硫化钼的制备研究现状及展望[J]. 合成技术及应用, 2016, 31(1): 26-30.
[3] 张亨. 纳米二硫化钼的制备及性质研究进展[J]. 中国钼业, 2015, 39(3): 5-9.
[4] S ynthesis and characterization of large-area and continuous MoS₂ atomic layers by RF Magnetron Sputtering[J]. Nanoscale, 2016, 8(7): 101039.
[5] Alam K, Lake R K.Monolayer Transistors Beyond the Technology Road Map[J]. IEEE TransactionsonElectron Devices, 2012, 59(12): 3250.
[6] Radisavljevic B, Radenovic A, Brivio J, et al.Single-layer MoS₂ transistors[J]. Nature Nanotechnology, 2011, 6(3): 147-150.
[7] 魏争, 王琴琴, 郭玉拓, 等. 高质量单层二硫化钼薄膜的研究进展[J]. 物理学报, 2018, 67(12): 263-295.
[8] Novoselov K S, Geim A K, Morozov S V, et al.Electric Field Effect in Atomically Thin CarbonFilms[J]. Science, 2004, 306: 666-669.
[9] 夏万顺. 二硫化钼薄膜的制备及其光探测器研究[D]. 成都: 电子科技大学, 2018.
[10] 杨钊. 二硫化钼的制备及其光电特性研究[D]. 广州: 暨南大学, 2017.
[11] 邵红红, 陈威. 射频磁控溅射法制备二硫化钼薄膜[J]. 润滑与密封, 2007, 32(12): 43-46.
[12] 高斌基. 磁控溅射可控沉积MoS₂基复合薄膜及其摩擦学性能研究[D]. 兰州: 兰州理工大学, 2018.
[13] Xiao J R, Qi M, Cheng Y, et al.Influences of nitrogen partial pressure on the optical properties of copper nitride films[J]. RSC Advances, 2016, 6: 40895-40899.

Metrics

Viewed

Full text

Abstract

Cited

Shared

Discussed

本文评价

推荐阅读 10

[1]	李得天, 成永军, 张虎忠, 孙雯君, 王永军, 孙健, 李刚, 裴晓强. 碳纳米管场发射阴极制备及其应用研究[J]. 真空, 2018, 55(5): 1 -9 .
[2]	周彬彬, 张建, 何剑锋, 董长昆. 基于 CVD 直接生长法的碳纳米管场发射阴极[J]. 真空, 2018, 55(5): 10 -14 .
[3]	李志胜. 空间环境下超大型红外定标用辐射屏蔽门的研制[J]. 真空, 2018, 55(5): 66 -70 .
[4]	郑列, 李宏. 200kV/2mA 连续可调直流高压发生器的设计[J]. 真空, 2018, 55(6): 10 -13 .
[5]	柴晓彤, 汪亮, 王永庆, 刘明昆, 刘星洲, 干蜀毅. 基于 STM32F103 单片机的单泵运行参数数据采集系统[J]. 真空, 2018, 55(5): 15 -18 .
[6]	孙立志, 闫荣鑫, 李天野, 贾瑞金, 李征, 孙立臣, 王勇, 王健, 张强. 放样氙气在大型收集室内分布规律研究[J]. 真空, 2018, 55(5): 38 -41 .
[7]	黄思 , 王学谦 , 莫宇石 , 张展发 , 应冰 . 液环压缩机性能相似定律的实验研究[J]. 真空, 2018, 55(5): 42 -45 .
[8]	纪明, 孙亮, 杨敏勃. 一种用于对月球样品自动密封锁紧的设计[J]. 真空, 2018, 55(6): 24 -27 .
[9]	李民久, 熊涛, 姜亚南, 贺岩斌, 陈庆川. 基于双管正激式变换器的金属表面去毛刺 20kV 高压脉冲电源[J]. 真空, 2018, 55(5): 19 -24 .
[10]	刘燕文, 孟宪展, 田宏, 李芬, 石文奇, 朱虹, 谷兵, 王小霞 . 空间行波管极高真空的获得与测量[J]. 真空, 2018, 55(5): 25 -28 .