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真空 ›› 2021, Vol. 58 ›› Issue (3): 45-50.doi: 10.13385/j.cnki.vacuum.2021.03.09

• 薄膜 • 上一篇    下一篇

真空热处理对AZO膜结构及光电性能的影响*

张心会1, 李青霄2   

  1. 1.河南城建学院 能源与建筑环境工程学院,河南 平顶山467036;
    2.河南城建学院 材料与化工学院,河南 平顶山467036
  • 收稿日期:2020-06-18 出版日期:2021-05-25 发布日期:2021-06-01
  • 作者简介:张心会(1979-),男,河南省西华县人,硕士,高级工程师。
  • 基金资助:
    *河南城建学院博士基金(批准号:Q2018015)

Effect of Vacuum Heat Treatment on Structure and Photoelectric Properties of AZO Film

ZHANG Xin-hui1, LI Qing-xiao2   

  1. 1. School of Energy and Building Enviroment Engineering,University of Urban Construction,Pingdingshan 467036,China;
    2. School of Materials and Chemical Engineering,University of Urban Construction,Pingdingshan 467036,China
  • Received:2020-06-18 Online:2021-05-25 Published:2021-06-01

摘要: 采用直流磁控溅射法分别在预热的和室温下的玻璃衬底上制备了AZO薄膜,并对室温下制备的AZO薄膜进行了真空退火。使用X射线衍射仪、四探针测试仪、紫外-可见分光光度计和霍尔测试仪对这两种工艺条件下制备的AZO薄膜进行了表征,比较研究了两种热处理方式——衬底预热和真空退火对所制备的AZO薄膜结构和光电性质的影响。结果表明,衬底预热条件下制备的AZO薄膜有效抑制了(101)多晶相的形成;室温条件下制备的AZO薄膜有较多的(101)多晶相形成,经过真空退火热处理后,仍未能有效消除(101)多晶相。衬底预热制备出了厚度为380nm、方阻为20Ω/□的AZO薄膜,400~1200nm波段的平均透射率达到81.45%。真空退火后的AZO薄膜厚度为403nm、方阻为33Ω/□,400~1200nm波段的平均透射率达到81.9%。

关键词: AZO薄膜, 真空, 热处理, 方阻, 光电性能

Abstract: AZO thin films were respectively deposited on the preheated glass substrate and room temperature by DC magnetron sputtering, and AZO films prepared at room temperature were annealed in vacuum. X-ray diffractometer, ultraviolet-visible spectrometer, four-point probes and Hall tester were used to character the prepared samples. The effects of two heat treatment methods, i.e.substrate pre-heating and vacuum annealing, on the structure and photoelectric properties of AZO thin films were comparatively studied. The results show that AZO thin films prepared under substrate preheating condition effectively inhibit the formation of(101)polycrystalline phase. AZO thin films prepared at room temperature have more(101)polycrystalline phase formation, and after vacuum annealing heat treatment, the(101)polycrystalline phase cannot be well eliminated. AZO thin films with a thickness of 380 nm and a square resistance of 20Ω/□ were prepared under the substrate preheating condition, the average transmittance between 400 nm and 1200 nm wavelength is 81.5%. The vacuum-annealed AZO film with a thickness of 403nm and a square resistance of 33Ω/□ has an average transmittance of 81.9% in the 400-1200nm band.

Key words: AZO thin film, vacuum, heat treatment, sheet resistance, photoelectric properties

中图分类号: 

  • TN304
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