真空 ›› 2021, Vol. 58 ›› Issue (3): 45-50.doi: 10.13385/j.cnki.vacuum.2021.03.09
张心会1, 李青霄2
ZHANG Xin-hui1, LI Qing-xiao2
摘要: 采用直流磁控溅射法分别在预热的和室温下的玻璃衬底上制备了AZO薄膜,并对室温下制备的AZO薄膜进行了真空退火。使用X射线衍射仪、四探针测试仪、紫外-可见分光光度计和霍尔测试仪对这两种工艺条件下制备的AZO薄膜进行了表征,比较研究了两种热处理方式——衬底预热和真空退火对所制备的AZO薄膜结构和光电性质的影响。结果表明,衬底预热条件下制备的AZO薄膜有效抑制了(101)多晶相的形成;室温条件下制备的AZO薄膜有较多的(101)多晶相形成,经过真空退火热处理后,仍未能有效消除(101)多晶相。衬底预热制备出了厚度为380nm、方阻为20Ω/□的AZO薄膜,400~1200nm波段的平均透射率达到81.45%。真空退火后的AZO薄膜厚度为403nm、方阻为33Ω/□,400~1200nm波段的平均透射率达到81.9%。
中图分类号:
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