真空 ›› 2019, Vol. 56 ›› Issue (3): 37-40.doi: 10.13385/j.cnki.vacuum.2019.03.08
李如永, 段苹, 崔敏, 王吉有, 原安娟, 邓金祥
LI Ru-yong, DUAN Ping, CUI Min, WANG Ji-you, YUAN An-juan, DENG Jin-xiang1
摘要： 本文采用双靶材交替溅射的射频磁控溅射法生长了高质量的Mg掺杂氧化镓薄膜,并将制备的样品在1000℃条件下进行后退火处理,以研究退火前后Mg掺杂Ga2O3薄膜的性质变化。XRD结果表明,退火后的（004）、（202）和（120）峰从无到有,（401）、（601）和（122）峰由强变弱,表明退火改变了Mg掺杂Ga2O3薄膜的结构。AFM结果表明,退火后的薄膜表面均方根粗糙度由1.3637nm增大到17.1133nm。EDS结果表明,退火处理后的Mg元素重量百分比有所提高。紫外可见透射光谱研究表明,退火前薄膜在200-1500nm波长范围内的平均光透过率较低,大约为80%,退火后平均光透过率明显提高到90%以上,此外薄膜光学吸收边蓝移,带隙宽度变大,表明退火有助于改善薄膜结构,增强光透性。光致发光谱实验结果表明,相比较退火处理后的薄膜,退火前的光致发光峰几乎可以忽略不计,这说明退火可显著改变Mg掺杂Ga2O3薄膜的光致发光特性。
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