双靶磁控溅射工艺参数对AZO薄膜性能的影响

doi:10.13385/j.cnki.vacuum.2026.01.06

摘要/Abstract

摘要： 采用双靶磁控溅射技术在石英玻璃基底上制备了AZO薄膜,通过调整溅射功率、溅射气压和衬底温度等关键工艺参数,深入研究了这些参数对AZO薄膜透光度和导电性的影响。使用紫外分光光度计与四探针测试仪等设备对ATO薄膜进行了表征分析。结果表明：随着溅射功率的增加,薄膜的透光度和电阻率均呈现下降趋势,在30 W铝靶溅射功率下透光性最好,在50 W溅射功率下电阻率最低;随着溅射气压的增大,薄膜透光度和电阻率先增加后降低,在0.7 Pa溅射气压下AZO薄膜在可见光范围内的透光性最好,透光率达到90%以上,在1.0 Pa溅射气压下电阻率最低,为43 Ω·cm;在250 ℃的衬底温度下薄膜的性能达到最优,其在可见光范围内的平均透光度为87%,电阻率为38 Ω·cm。

关键词: AZO薄膜, 双靶磁控溅射, 溅射功率, 溅射气压, 衬底温度

Abstract: AZO thin films were sputtered on quartz glass substrate by dual-target magnetron sputtering technique. By adjusting the key process parameters such as sputtering power, sputtering pressure and substrate temperature, the specific effects of these parameters on the transmittance and conductivity of AZO thin films were studied in depth. The ATO film was characterized and analyzed by ultraviolet spectrophotometer and four-probe tester. The results show that the transmittance and resistivity of the films gradually decrease with the increase of sputtering power, the best transmittance is achieved at 30 W sputtering power, and the lowest resistivity is achieved at 50 W sputtering power of aluminum target. With the increase of sputtering gas pressure, the film transmittance and resistivity firstly increase and then decrease, and the best transmittance of AZO film in the visible light range reaches more than 90% at 0.7 Pa sputtering gas pressure, and the lowest resistivity is 43 Ω·cm at 1.0 Pa sputtering gas pressure. The best performance of the films is achieved at a substrate temperature of 250 ℃, with an average transmittance of 87% in the visible range and a resistivity of 38 Ω·cm.

Key words: AZO thin film, dual target magnetron sputtering, sputtering power, sputtering pressure, substrate temperature

中图分类号: TB34

张健, 于尉, 孙冰成, 张贤旺. 双靶磁控溅射工艺参数对AZO薄膜性能的影响[J]. 真空, 2026, 63(1): 35-39.

ZHANG Jian, YU Wei, SUN Bingcheng, ZHANG Xianwang. Influence of Process Parameters of Dual Target Magnetron Sputtering on the Properties of AZO Thin Films[J]. VACUUM, 2026, 63(1): 35-39.

参考文献

[1] 李慧,杨小天,王艳杰,等.溅射功率对掺铝氧化锌薄膜晶体管性能的影响[J]. 吉林建筑大学学报, 2022, 39(6): 78-81.
[2] 陈星辉,唐颖慧,王加强,等.衬底温度对氧化锌薄膜微结构及光学性能的影响[J]. 人工晶体学报,2021, 50(9): 1681-1687.
[3] LIU J H, YI Y H, ZHOU Y H, et al.Highly stretchable and flexible graphene/ITO hybrid transparent electrode[J]. Nanoscale Research Letters, 2016, 11(1): 108.
[4] 张庆远,王丽军,王小平,等.掺铝氧化锌(AZO)薄膜的应用及研究评述[J]. 材料科学与工程学报, 2018, 36(1): 133-141.
[5] 王今朝. 掺杂ZnO透明导电薄膜的光电性能与导电机理研究[D]. 武汉:湖北大学, 2016.
[6] 何双赐,钟志成,汪竞阳,等.衬底温度对共溅射制备AZO薄膜光电性能影响[J]. 压电与声光,2018,40(5):784-788.
[7] 冯媛媛,邓军,许晓芳,等.双靶共溅射制备AZO薄膜的光电性能研究[J]. 半导体光电,2021,42(5):656-661.
[8] 王延峰,谢希成,刘晓洁,等.F,Al共掺杂ZnO透明导电薄膜的制备及掺杂机理研究[J]. 物理学报,2020,69(19):306-314.
[9] ÁLVAREZ-VÁZQUEZ J I, SASTRÉ-HERNÁNDEZ J, ORTEGA-CERVANTEZ G, et al. Physical properties of aluminum doped Zinc Oxide thin films and single wall carbon nanotubes bilayers with potential application in photovoltaics devices[J]. Engineering Research Express, 2023, 5(3): 035034.
[10] 王航,师清奎,李谦,等.Al掺杂对ZnO薄膜形貌和光学性能的影响[J]. 半导体光电,2019,40(2):234-238.
[11] SUBRAMANYAM T K,GOUTHAM P, KUMAR S P, et al.Optimization of sputtered AZO thin films for device application[J]. Materials Today: Proceedings,2018,5(4):10851-10859.
[12] 刘亚强,陈青清,李朋.磁控溅射法制备铝掺杂氧化锌薄膜研究进展[J]. 信阳师范学院学报(自然科学版),2017,30(4):667-671.
[13] 王冶,王超,杨帆.铝掺杂量对于铝锌氧薄膜晶体管的电学性能的影响[J]. 吉林建筑大学学报,2021,38(2):83-88.
[14] PODDAR N P, MUKHERJEE S K.Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering[J]. Journal of Materials Science: Materials in Electronics, 2019, 30: 537-548.
[15] 姚婷婷,杨勇,李刚,等.直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响[J]. 材料科学与工程学报,2017,35(5):747-751.
[16] 王玉新,崔潇文,藏谷丹,等.Al掺杂浓度对氧化锌纳米棒结构和光学性能的影响[J]. 功能材料, 2018,49(1):1001-1004.
[17] 陈首部,陆轴,兰椿.氧化锌薄膜的微观结构及其结晶性能研究[J]. 中南民族大学学报(自然科学版),2017,36(4):67-72.
[18] 陈星辉,陈家辉,张聚航,等.Al₂O₃掺杂对ZnO薄膜结构及光电性能的影响[J]. 湖南工业大学学报,2023,37(2):38-43.
[19] 韩岩岩. 反应磁控溅射制备AZO薄膜及其不稳定性[D]. 大连:大连理工大学, 2019.
[20] 薛腊梅. 掺杂ZnO薄膜压敏变阻特性及其调控[D]. 重庆:重庆理工大学, 2022.

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