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VACUUM ›› 2019, Vol. 56 ›› Issue (5): 61-64.doi: 10.13385/j.cnki.vacuum.2019.05.12

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Study on Magnetron Sputtering and Wet Etching Technology of Chromium Silicon Thin Film Resistive Layer

LUO Jun-yao1,2, LIU Guang-zhuang3, YANG Zhao1,2, LI Bao-chang1,2, TA Shi-wo1,2   

  1. 1.Guangdong Fenghua Advanced Technology Holding Co.,LTD, Zhaoqing 526000, China;
    2.State Key Laboratory of Advanced Material and Electronic Components. Zhaoqing 526020. China;
    3.Guangdong AIB Polytchnic, Guangzhou 510000,China
  • Received:2018-12-19 Published:2019-10-15

Abstract: In this paper, nickel chromium silicon thin film was deposited on 96 alumina substrate by DC magnetron sputtering method, and then the resistance patterns of different requirements are realized bylithography and wet etching. In the graphic process, to comparethe etching effects of HNA etching system, TMAH etching system and catalytic oxidation etching system , and then choice the best etching system and optimizethe process parameters. In the catalytic oxidation etching system (CNAHNO3H2O) with CNA content of 30% etching temperature 50℃, the etching rate of about 4 nm/s, etching effect is best, and the design dimension deviation is small, which can realize nickel chromium silicon thin film etching line width to （15±1）μm, meet the requirements of the design and production of high precision precision membrane resistance.

Key words: film resistance, nickel-chromium silicon, wet etching, magnetron sputtering

CLC Number: 

  • TB43
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