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VACUUM ›› 2023, Vol. 60 ›› Issue (1): 30-35.doi: 10.13385/j.cnki.vacuum.2023.01.05

• Thin Film • Previous Articles     Next Articles

Study on Atomic Layer Deposition of Al2O3 Protective Film of Cu Electrode

WU Li-ying, QU Min-ni, FU Xue-cheng, TIAN Miao, MA Ling, CHENG Xiu-lan   

  1. Center for Advanced Electronic Materials and Devices, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2022-03-23 Online:2023-01-25 Published:2023-02-07

Abstract: The preparation method of protective and passive film for Cu electrode of enhanced power device is introduced. Al2O3 films are deposited on copper by thermal ALD and plasma enhanced ALD techniques. The effects of different ALD techniques, oxidant type, deposition temperature and carrier gas on the quality of Al2O3 films and the protection performance for Cu oxidization are studied. The results show that oxidants play an important role in Al2O3 film quality and the protection performance for copper electrode. When ozone(O3) is used as oxidant, Al2O3 film deposited on copper layer is easy to fall off, and the adhesion to copper surface is very poor. Using oxygen plasma (O-) as oxidant, copper surface is oxidized to form CuOx layer. With H2O as oxidant, the Al2O3 film obtained at low temperature of 100℃ is dense without obvious defects, and has excellent bonding force with copper layer. When the deposition temperature is higher than 200℃, the defects of Al2O3 deposited by ALD increase obviously. In plasma enhanced atomic layer deposition, when the carrier gas is Ar, the thickness of Al2O3 film is not uniform, and the copper electrode is strongly oxidized.

Key words: ALD, copper electrode, Al2O3, passivation protection, oxidant

CLC Number: 

  • TB43
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