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VACUUM ›› 2021, Vol. 58 ›› Issue (6): 13-20.doi: 10.13385/j.cnki.vacuum.2021.06.03

• Thin Film • Previous Articles     Next Articles

The Recent Development and Future of Atomic Layer Deposition of Alumina Thin Films

DUAN Shan-Shan1, SHI Chang-yong2, YANG Li-Zhen1, LIU Zhong-wei1, ZHANG Hai-bao1, CHEN Qiang1   

  1. 1. Lab of Plasma Physics & Materials, Beijing Institute of Graphic Communication, Beijing 102600, China;
    2. Beijing Institute of Fashion Technology, Beijing 100029, China
  • Received:2020-11-10 Online:2021-11-25 Published:2021-11-30

Abstract: Atomic layer deposition(ALD) technology is a thin film growth technology based on self-limiting interfacial reaction. The atomic layer technology can prepare thin films with dense structure, high conformal, low defect density, excellent performance and great uniformity. Alumina is the most common thin film deposited by atomic layer deposition（ALD-Al2O3）. Al2O3 film has high transparency, high band gap width, high dielectric constant, and high barrier properties as well as good chemical and thermal stability. As a passivation layer, gas permeation barrier layer and grid dielectric layer, alumina is widely used in solar cell passivation layer, OLED packaging, organic solar cell dielectric layer, printed electronics and microelectronic device encapsulation. This article reviews the principle, online diagnosis and application development status of ALD-Al2O3, including the growth mechanism, monomer selection, deposition method, and in-situ diagnosis of alumina film. The application and the future development trend of ALD-Al2O3 film are predicted.

Key words: ALD, Al2O3 thin film, barrier Layer, passivation layer, dielectric layer

CLC Number: 

  • TB43
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