Abstract: Through-silicon-via is currently a very popular high-density packaging technology, but the metallization of deep silicon holes in silicon through-hole technology is a very difficult process issue, because conventional magnetron sputtering techniques are difficult to deposit seed layers such as copper and tungsten in high aspect ratio silicon holes. Through simulation and calculation of the relationship between the two-dimensional non centered collision angles of copper atoms during oblique sputtering, it was found that when there is energy loss in atomic collisions, the angle of copper atoms incident into the silicon hole changes, which helps to deposit at the depth of the silicon hole. In this paper, copper seed layers were deposited in silicon blind holes with different aspect ratios by using negative bias assisted confocal sputtering of multiple copper targets to verify the feasibility of this method, and the deposition of copper seed layers in silicon pores with a depth to width ratio of 8:1 was successfully achieved by three target co sputtering.

Key words: through -silicon-via, multi target confocal sputtering, copper seed layer