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VACUUM ›› 2019, Vol. 56 ›› Issue (6): 1-6.doi: 10.13385/j.cnki.vacuum.2019.06.01

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Development and Discharge Behavior of Novel Double Bipolar Pulse High Power Impulse Magnetron Sputtering System

WU Hou-pu, TIAN Qin-wen, TIAN Xiu-bo, GONG Chun-zhi   

  1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
  • Received:2019-07-07 Online:2019-11-25 Published:2019-12-03

Abstract: A novel double bipolar pulse high power impulse magnetron sputtering power supply was designed and developed independently. The power supply contains three working modes including the discharge mode of conventional high power impulse magnetron sputtering (HiPIMS), the discharge mode of conventional bipolar pulse high power impulse magnetron sputtering (BP-HiPIMS) and the discharge mode of double bipolar pulse high power impulse magnetron sputtering (DBP-HiPIMS). Especially for the third mode, the double bipolar pulse has more advantages than that of the conventional single bipolar pulse. The effects of positive pulse on the discharge characteristics of Cr target in Ar atmosphere under the conditions of conventional BP-HiPIMS and novel DBP-HiPIMS were studied. The results show that the average substrate net ion current of both BP-HiPIMS and DBP-HiPIMS significantly increased with the increase of the positive pulse voltage. Compared with the conventional BP-HiPIMS mode, the DBP-HiPIMS mode has higher average substrate net ion current at different positive pulse voltages. When the positive pulse voltage was 100V, the average substrate net ion current of DBP-HiPIMS mode was 47.0% higher than that of the conventional BP-HiPIMS mode when the substrate bias was 0V and 30.3% higher when the substrate bias was 60V. The results show that the novel DBP-HiPIMS discharge mode can further improve the acceleration effect of positive pulse on ions, which will be conducive to the improvement of film quality.

Key words: bipolar pulse high power impulse magnetron sputtering, positive pulse, target voltage, target current, substrate current

CLC Number: 

  • TB43
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