真空 ›› 2021, Vol. 58 ›› Issue (2): 1-5.doi: 10.13385/j.cnki.vacuum.2021.02.01
• 薄膜 • 下一篇
李成明1,2, 苏宁3, 李琳4, 姚威振1, 杨少延1,5
LI Cheng-ming1,2, SU Ning3, LI Lin4, YAO Wei-zhen1, YANG Shao-yan1,5
摘要: 以氮化镓(GaN)为代表的第三代半导体材料,是我国重要战略发展方向之一,而氢化物气相外延(HVPE)作为一种重要材料生长技术,是有效制备单晶材料的工艺手段,本文提出了一种分层次递变流速下HVPE流场与温度场,在垂直腔结构条件下,模拟从腔体中间区域到边缘区域不同流速层次条件下,腔内材料生长区域反应前驱物分布,得出结论:在边缘喷射区域流速为中心区域流速三倍时,反应前驱物可以有效分布在衬底托盘表面。最后,在蓝宝石衬底GaN籽晶表面进行HVPE材料生长,获得平均厚度为20.1μm,均匀性起伏6.9%的GaN单晶,证明理论优化设计下生长出良好的单晶薄膜材料。
中图分类号:
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