CF4流量及射频功率等对反应离子刻蚀硅基材料的影响*

doi:10.13385/j.cnki.vacuum.2021.04.17

真空 ›› 2021, Vol. 58 ›› Issue (4): 93-97.doi: 10.13385/j.cnki.vacuum.2021.04.17

CF₄流量及射频功率等对反应离子刻蚀硅基材料的影响^*

廖荣, 崔继耀, 董景尚, 陈栋, 何蔚筠

华南理工大学微电子学院,广东广州 510640

收稿日期:2020-06-17 出版日期:2021-07-25 发布日期:2021-08-05
作者简介:廖荣（1970-）,男,江西吉安市人,博士,高级实验师。
基金资助:
* 2020 年华南理工大学“学生研究计划”项目（X202010561130）; 2018 年华南理工大学第五批“探索性实验”项

Effect of CF₄ Flow Rate and RF Power on Reactive Ion Etched Silicon Based Materials

LIAO Rong, CUI Ji-yao, DONG Jing-shang, CHEN Dong, HE Wei-jun

School of Microelectronic, South China University of Technology, Guangzhou 510640, China

Received:2020-06-17 Online:2021-07-25 Published:2021-08-05

摘要/Abstract

摘要： 通过一系列的刻蚀实验,研究了在反应离子刻蚀（RIE）过程中,CF₄流量及射频功率等工艺参数对刻蚀硅基材料的影响,采用不同工艺条件,得出了对应的刻蚀速率、均匀性、选择比等刻蚀参数,并对结果进行了比较与分析,得到了相对最佳的工艺条件,能较好地实现硅的各向异性刻蚀,为硅基材料刻蚀技术在半导体工艺中的应用做了一定的实验探索。

关键词: 反应离子刻蚀, 各向异性, 硅, 均匀性, 选择比

Abstract: Through a series of etching experiments, the effects of process parameters such as CF4 flow rate and RF power on etched silicon-based materials in the process of reactive ion etch(RIE)were studied. The corresponding etching parameters such as etch rate, uniformity and selection ratio, etc. were obtained by using different technological conditions. The results are compared and analyzed, and the relatively optimum technological conditions are obtained, which can realize the anisotropy etch of silicon. The application of silicon-based material etching technology in semiconductor technology has been explored experimentally in this paper.

Key words: RIE, anisotropy, silicon, uniformity, selection ratio

中图分类号:

TN304

廖荣, 崔继耀, 董景尚, 陈栋, 何蔚筠. CF₄流量及射频功率等对反应离子刻蚀硅基材料的影响^*[J]. 真空, 2021, 58(4): 93-97.

LIAO Rong, CUI Ji-yao, DONG Jing-shang, CHEN Dong, HE Wei-jun. Effect of CF₄ Flow Rate and RF Power on Reactive Ion Etched Silicon Based Materials[J]. VACUUM, 2021, 58(4): 93-97.

参考文献

[1] PIERRON O N, MUHLSTEIN C L.The critical role of environment in fatigue damage accumulation in deep-reactive ion-teched single-crystal silicon structural films[J]. Journal of Microelectromechanical Systems, 2006, 15(1): 111-119.
[2] PORTER D A, BERFIELD T A.Die separation and rupture strength for deep reactive ion etched silicon wafers[J]. Journal of Micromechanics and Microengineering, 2013, 8: 11-16.
[3] 李元元. 二氧化硅和光阻等离子刻蚀影响因素正交实验研究[D]. 天津: 天津大学, 2010.
[4] BRUCCOLERI A, GUAN D, MUKHERJEE P, et al.Potassium hydroxide polishing of nanoscale deep reactive-ion etched ultrahigh aspect ratio gratings[J]. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 2013, 11: 12-17.
[5] 展明浩, 宋同晶, 皇华, 等. 基于ICP的硅高深宽比沟槽刻蚀技术[J]. 电子科技, 2012, 25(8): 77-79.
[6] 赵毅红, 陈荣发, 刘伯实. Si₃N₄薄膜的成分与结构研究[J]. 真空, 2004, 41(4): 71-73.
[7] DELRIO F W, FRIEDMAN L H, GAITHER M S, et al.Decoupling small-scale roughness and long-range features on deep reactive ion etched silicon surfaces[J]. Journal of Applied Physics, 2013, 1: 25-28.
[8] 陈晓南, 杨培林, 庞宣明, 等. 等离子体刻蚀中工艺参数对刻蚀速率影响的研究[J]. 西安交通大学学报, 2004, 38(5): 546-547.
[9] 张锦, 冯伯儒, 杜春雷, 等. 反应离子刻蚀工艺因素研究[J]. 光电工程, 1997(S1): 47-52.
[10] GILCHRIST J R, TOUZET B.Ultrahigh-Performance Ion-Etched Holographic Diffraction Gratings[EB/OL]. [2013-01].https://www.photonics.com/Articles/Ultrahigh-Performance_Ion-Etched_Holographic/a14664.
[11] CHOUHARY A, CUGAT J, PRADEESH K, et al.Single -mode rib waveguides in(Yb, Nb): RbTiOPO4 by reactive ion etching[J]. Journal of Physics D: Applied Physics, 2013, 46(14): 108-145.
[12] 杜文涛, 曾志刚, 胡志宇. 氧化硅RIE刻蚀工艺研究[J]. 半导体光电, 2014, 35(1): 1001-1008.
[13] HARRIS C, SAWYER W D, KONUMA M, et al.Photoluminescence study of reactive-ion etched silicon: a new boron-related defect[J]. Materials Science and Engineering: B, 1989, 4(1-4): 4457-460.
[14] ZHITARYUK V G, HODOVANYUK V M, DOKTOROVYCH I V. Optoelectronic properties of ion-etched silicon surfaces[C/OL]. Eighth International Conference on Correlation Optics, 2007[2008-04-22]. https://doi.org/10.1117/12.797227.
[15] 陈树华, 武华, 周弘毅, 等. 硅片表面粗糙度对界面态的影响[J]. 电子科技, 2013, 26(9): 50-53.

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CF₄流量及射频功率等对反应离子刻蚀硅基材料的影响^*

Effect of CF₄ Flow Rate and RF Power on Reactive Ion Etched Silicon Based Materials

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